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2-16g1b Datasheet PDF File

For 2-16g1b Found Datasheets File :: 50 Search Time::1.954ms
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					Toshiba Semiconductor
Part No.	TIM4450-16UL09
OCR Text	...MIN. -1.0 -5 TYP. MAX. 3600 -2.5 10.5 1.5 -4.0 1.8 CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200A gm...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
File Size	117.09K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM4450-25UL
OCR Text	... MIN. -1.0 -5 TYP. 5000 -2.5 14.4 1.2 MAX. -4.0 1.5 u The information contained herein is presented only as a guide for the...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz
File Size	44.34K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM4450-45SL
OCR Text	... C/W MIN. -1.0 -5 TYP. 8000 -2.5 24 0.8 MAX. -4.0 1.2 u The information contained herein is presented only as a guide for the appl...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	507.17K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM3438-12UL
OCR Text	... -44 TYP. MAX. 41.5 12.5 3.2 42 -47 2.6 3.8 0.6 3.0 80 CONDITIONS VDS= 10V IDSset=2.6A dB A dB % f = 3.4 to 3.8GHz ...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=41.5dBm at 3.4GHz to 3.8GHz
File Size	117.82K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM5359-16UL
OCR Text	...MIN. -1.0 -5 TYP. MAX. 3600 -2.5 10.5 1.5 -4.0 1.8 gm VGSoff IDSS VGSO Rth(c-c) Channel to Case u The information contained...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	365.80K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM6472-35SL TIM6472-35SL06
OCR Text	... MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 26 1.3 u The information contained herein is presented only as a guide for the...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	505.82K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7785-12UL09
OCR Text	...5 -44 TYP. MAX. 41.5 8.5 3.2 38 -47 2.6 3.8 0.6 3.0 80 CONDITIONS VDS= 10V IDSset=2.6A dB A dB % f = 7.5 to 8.5GHz ...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
File Size	117.17K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7785-25UL
OCR Text	...YP. MAX. 44.5 8.5 6.8 36 -47 5.2 7.6 0.6 6.0 80 CONDITIONS VDS= 10V IDSset=5.2A dB A dB % f = 7.7 to 8.5GHz add IM3 Tw...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
File Size	116.96K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7785-30SL TIM7785-30SL06
OCR Text	... MIN. -1.0 -5 TYP. 6300 -2.5 18 1.0 MAX. -4.0 1.3 u The information contained herein is presented only as a guide for the a...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	496.65K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7785-35SL TIM7785-35SL06
OCR Text	... MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 1.3 u The information contained herein is presented only as a guide for the a...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	494.62K / 4 Page	View it Online	Download Datasheet

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