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16mh Datasheet PDF File

For 16mh Found Datasheets File :: 118 Search Time::1.125ms
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				Intersil, Corp. Intersil Corporation
Part No.	IRFBC40
OCR Text	... = 50V, starting TJ = 25oC, L = 16mh, RG = 25, peak IAS = 6.8A Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 10 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 0 50 100 150 8 6 4 ...
Description	CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
File Size	54.48K / 7 Page	View it Online	Download Datasheet

				http:// FAIRCHILD[Fairchild Semiconductor]
Part No.	ABR-42022
OCR Text	...TDS-965 Gate Drive Xfmr, Lpri = 16mh (min) Premier Magnetics PMGD-04 not used - install jumpers from pin 10 to pin 4, and from pin 5 to pin 6 Inductor, LprI = 5.4mH Premier Magnetics TDS-892 not used EMI/RFI, 600mH, DC resistance = 0.45. ...
Description	ML4833 220V Non-Dimming Ballast Design
File Size	66.64K / 4 Page	View it Online	Download Datasheet

				Vishay Semiconductors IRF[International Rectifier]
Part No.	MBRD320 MBRD330 MBRD340 MBRD320TR MBRD340PBF
OCR Text	...mJ A TJ = 25 C, IAS = 1Amp, L = 16mh Current decaying linearly to zero in 1 sec Frequency limited by TJ max. Va = 1.5 x Vr typical Following any rated load condition and with rated VRRM applied Electrical Specifications Parameters VFM ...
Description	Schottky (Diodes & Rectifiers) 3.0 Amp 40 Volt SCHOTTKY RECTIFIER 30V 3A Schottky Discrete Diode in a D-Pak package 40V 3A Schottky Discrete Diode in a D-Pak package 20V 3A Schottky Discrete Diode in a D-Pak package
File Size	63.66K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7N140507
OCR Text	...= 25 V, Starting TJ = 25C, L= 0.16mh Peak I AS = 55A, V GS = 10V, RG= 25 ISD 55A, di/dt 220A/s, Pulse width 300 s; Duty Cycle 2% VDD 55V, TJ 150C Case Outline and Dimensions -- SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTER...
Description	HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)
File Size	192.99K / 7 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEF10N4
OCR Text	... a Condition VDD =50V, L=9.16mh RG=25 Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING 6 EAS IAS 450 10 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS ...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	39.91K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL2203NPBF
OCR Text	.... 5 1320290 mJ IAS = 60A, L = 0.16mh Typ. --- 0.029 --- --- --- --- --- --- --- --- --- --- --- 11 160 23 66 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current ...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	176.70K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT12045L2VFR
OCR Text	...3471 4 Starting T = +25C, L = 8.16mh, R = 25, Peak I = 28A temperature. j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 5 I I [Cont.], di/ = 100A/s, T 150C, R = 2.0 V = 200V. S D j G R dt APT Reserves the right to change, without...
Description	MOSFET POWER MOS V
File Size	125.27K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT6025SVFR APT6025BVFR APT6025BVFR_05 APT6025BVFR05
OCR Text	...3471 4 Starting T = +25C, L = 4.16mh, R = 25, Peak I = 25A temperature. j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 5 I I [Cont.], di/ = 100A/s, T 150C, R = 2.0 V = 200V. S D j G R dt APT Reserves the right to change, without...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	113.40K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6025SVR
OCR Text	...3471 4 Starting T = +25C, L = 4.16mh, R = 25W, Peak I = 25A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, withou...
Description	POWER MOS V MOSFET
File Size	59.71K / 4 Page	View it Online	Download Datasheet

For 16mh Found Datasheets File :: 118 Search Time::1.125ms
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