| |
|
 |
Powerchip Semiconductor
|
| Part No. |
A2S56D20CTP A2S56D30CTP A2S56D40CTP
|
| OCR Text |
...4U.com
A2S56D20CTP (4-bank x 16,777,216 - word x 4-bit) A2S56D30CTP (4-bank x 8,388,608 - word x 8-bit) A2S56D40CTP (4-bank x 4,194,304 -...65mm lead pitch - JEDEC standard for -6 , -75 - Intel standard for -5
PIN CONFIGURATION (TOP VIEW... |
| Description |
(A2S56D20CTP - A2S56D40CTP) 256Mb DDR SDRAM
|
| File Size |
629.22K /
37 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Matsushita
|
| Part No. |
MN103S52G
|
| OCR Text |
...mum instruction execution time: 16.7ns) 256 KB/8 KB 9 64 KB/4 KB 9 MN103SA7D (under development)
Parameter Operating voltage Operating fr...65mm pitch) In/Out common use: 62 80-pin LQFP (14mm x 14mm, 065mm pitch)
Note: In addition to the... |
| Description |
32 Bit Microcomputer for Inverter Control
|
| File Size |
213.32K /
3 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Mitsubishi Electric, Corp.
|
| Part No. |
M5M4V16169DRT-15 M5M4V16169DTP
|
| OCR Text |
16-bit) cached dram with 16k (1024-word by 16-bit) sram mitsubishi lsis (rev 1.0) jul. 1998 mitsubishi electric 1. 2. preliminary this docu...65mm lead pitch and 23.49mm package length. # multiplexed dram address inputs for reduced pin count ... |
| Description |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米(100万字6位)6K的缓存内存(1024字由16位)的SRAM
|
| File Size |
752.46K /
64 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Hynix Semiconductor, Inc.
|
| Part No. |
HY5DV641622AT-5
|
| OCR Text |
...e items 4mx16 organization 1m x 16 x 4banks row address a0 ~ a11 column address a0 ~ a7 bank address ba0, ba1 auto precharge flag a10 refresh 4k 400mil x 875mil 66 pin tsop-ii 0.65mm pin pitch top view v dd dq0 vddq dq1 dq2 v ssq dq3 dq4 v ... |
| Description |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
| File Size |
278.28K /
27 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|