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SIEMENS AG
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| Part No. |
SGB15N120
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| OCR Text |
...e ordering code sgp15n120 1200v 15a 1.5mj 150 c to-220ab q67040-s4274 sgb15n120 to-263ab(d2pak) q67040-s4275 sgw15n120 to-247ac q67040-s4276 maximum ratings parameter symbol value unit collector-emitter voltage v ce 1200 v dc collector cur... |
| Description |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
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| File Size |
415.74K /
12 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
ISL9R18120G2NL ISL9R18120P2NL
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| OCR Text |
... = 125 o c t b at i f = 30a, 15a, 7.5a t a at i f = 30a, 15a, 7.5a 5 10 15 20 25 0 3 6 9 12 15 18 21 24 27 30 i f , forward current (a)...1200v stealth diod e, to263/d2pak package general description back to to... |
| Description |
18A, 1200v Stealt Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
18A, 1200v Stealth Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
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| File Size |
239.30K /
9 Page |
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Infineon
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| Part No. |
SIDC14D120F6
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| OCR Text |
...g code sidc14d120f6 1200v 15a 3.8 x 3.8 mm 2 sawn on foil q67050 - a4170 - a001 mechanical parameter: raster size 3.8 x 3.8 area total / act ive 14.44 / 9.8 anode pad size 3.08 x 3.08 mm 2 thickness 12... |
| Description |
Diodes - HV Chips - SIDC14D120F6,1200v, 15a
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| File Size |
64.97K /
4 Page |
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Infineon
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| Part No. |
SIDC14D120E6
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| OCR Text |
...g code sidc14d120e6 1200v 15a 3.8 x 3.8 mm 2 sawn on foil q67050 - a4123 - a001 mechanical parameter: raster size 3.8 x 3.8 area total / act ive 14.44 / 9.8 anode pad size 3.08 x 3.08 mm 2 thickness 13... |
| Description |
Diodes - HV Chips - SIDC14D120E6, 1200v, 15a
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| File Size |
65.02K /
4 Page |
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Infineon
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| Part No. |
SIDC10D120H6
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| OCR Text |
...g code sidc10d120h6 1200v 15a 3.2 x 3.2 mm 2 sawn on foil q67050 - a4112 - a001 mechanical parameter: raster size 3.2 x 3.2 area total / act ive 10.24 / 6.5 anode pad size 2.48 x 2.48 mm 2 thickness 12... |
| Description |
Diodes - HV Chips - SIDC10D120H6, 1200v, 15a
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| File Size |
81.46K /
4 Page |
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Fuji Semiconductors, Inc.
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| Part No. |
7MBR25NE120
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| OCR Text |
...200V, VGE=0V VCE=0V, VGE=20V IC=15a, VGE=15V VCC=600V IC=15a VGE=15V RG=82 ohm VR=1200v IF=25A VR=1600V Min.
7MBR25NE120
Characteristics Typ. Max. 1.0 20 4.5 7.5 3.3 3.0 4000 1.2 0.6 1.5 0.5 0.35 1.0 0.1 3.3 0.8 0.6 1.5 0.5 1 0.6 1.4 1.... |
| Description |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
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| File Size |
492.47K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9K18120 ISL9K18120G3
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| OCR Text |
...VERY TIMES (ns) tb AT IF = 30A, 15a, 7.5A 400
400
300
300
200
200
100
ta AT dIF/dt = 200A/s, 500A/s, 800A/s
100 ta AT IF = 30A, 15a, 7.5A 0 200
0 0 3 6 9 12 15 18 21 IF, FORWARD CURRENT (A) 24 27 30
400
600
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| Description |
18A, 1200v Stealth Dual Diode
18A 1200v Stealth Dual Diode
18A, 1200v Stealth⑩ Dual Diode
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| File Size |
118.06K /
6 Page |
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it Online |
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