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SemeLAB SEME-LAB[Seme LAB] Motorola Mobility Holdings, Inc.
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| Part No. |
SMLA42CSM
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| Description |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300v,Vceo:300v,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300v,Vceo:300v,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装(Vcbo00V,Vceo00V,Vebo6V的)(不适用沟道增强型,高电压功率马鞍山场效应管(Vcbo00V,Vceo00V,Vebo6V的)
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| File Size |
16.25K /
2 Page |
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it Online |
Download Datasheet
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Electronic Theatre Controls, Inc. DOMINANT Opto Technologies Sdn. Bhd.
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| Part No. |
IRKH210-16D25 IRKK132-12 IRKK180-12 IRKL210-10 IRKK210-10 IRKH210-10 IRKN210-10 IRKL132-14 IRKL132-14D20 IRKL132-12 IRKL132-16 IRKL132-10 IRKL132-16D25 IRKL210-16D25 IRKN132-14 IRKN132-16 IRKN210-14 IRKL210-14 IRKH210-14D20
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| Description |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|2.5KV V(RRM)|210A I(T) THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|130a I(T) THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|180A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|210A I(T) THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|210A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|210A I(T) THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|210A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|130a I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|2KV V(RRM)|130a I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|130a I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|130a I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|130a I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|2.5KV V(RRM)|130a I(T) 晶闸管模块|倍增|加利福尼亚州| 1.4KV五(无线资源管理)| 130a条疙(T 晶闸管模块|倍增|加利福尼亚州| 1.6KV五(无线资源管理)| 130a条疙(T THYRISTOR MODULE|DOUBLER|CA|1.4KV V(RRM)|210A I(T) 晶闸管模块|倍增|加利福尼亚州| 1.4KV五(无线资源管理)| 210A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.4KV五(无线资源管理)| 210A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.6KV V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.6KV五(无线资源管理)| 210A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|2KV V(RRM)|210A I(T) 晶闸管模块|倍增|半CNTLD |负| 2kV的五(无线资源管理)| 210A我(翻译
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| File Size |
78.79K /
1 Page |
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it Online |
Download Datasheet
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Fairchild Semiconductor Corporation
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| Part No. |
FQI22N30
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| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 300v V(BR)DSS | 21A I(D) | TO-263 300v N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)
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| File Size |
729.00K /
9 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric, Corp.
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| Part No. |
CT20ASJ8
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| Description |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 130a I(C) | TO-252 晶体管| IGBT的|正陈| 400V五(巴西)国际消费电子展| 130a条一(c)|52
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| File Size |
75.53K /
2 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric, Corp.
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| Part No. |
CT20AS8
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| Description |
TRANSISTOR | IGBT | N-CHAN | 450V V(BR)CES | 130a I(C) | TO-252 晶体管| IGBT的|正陈| 450V五(巴西)国际消费电子展| 130a条一(c)|52
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| File Size |
75.35K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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