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INTERSIL[Intersil Corporation]
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| Part No. |
HGTD1N120BNS FN4649 HGTP1N120BN
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| OCR Text |
...0 0.476 10 -55 to 150 300 260 8 13 UNITS V A A A V V W W/oC mJ oC
oC oC
s s
CAUTION: Stresses above those listed in "Absolute Maximum...5 3.8 7.1 9.2 14 15 MAX 250 1.0 2.9 4.3 250 20 21 UNITS V V A A mA V V V nA A V nC nC
Collector t... |
| Description |
5.3A/ 1200V/ npt Series N-Channel IGBT 5.3A, 1200V, npt Series N-Channel IGBT From old datasheet system
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| File Size |
71.00K /
7 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTD1N120CNS FN4652 HGTP1N120CN
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| OCR Text |
... 6.0 6 TYP 20 2.05 2.75 7.1 9.7 13 16 MAX 250 1.0 2.4 3.2 250 19 28 UNITS V V A A mA V V V nA A V nC nC
Collector to Emitter Breakdown Vo...5 BVCES IC = 1.0A, VCE = 0.5 BVCES VGE = 15V VGE = 20V
2
HGTD1N120CNS, HGTP1N120CN
Electrical... |
| Description |
From old datasheet system 6.2A 1200V npt Series N-Channel IGBT 6.2A, 1200V, npt Series N-Channel IGBT
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| File Size |
76.20K /
7 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKB10N60A SKP10N60A SKW10N60A
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| OCR Text |
...3 1.4 1.25 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 1.8 1.65 5
Unit
V
A 40 1500 100 660 75 51 68 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A V C E = 25 V , V G E... |
| Description |
Fast IGBT in npt-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in npt-technology with soft fast recovery anti-parallel EmCon diode
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| File Size |
442.88K /
15 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9K30120 ISL9K30120G3
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| OCR Text |
... tb
VGE t1 t2
-
Figure 13. trr Test Circuit
Figure 14. trr Waveforms and Definitions
I = 1A L = 40mH R < 0.1 VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R +... |
| Description |
30A, 1200V Stealth?/a> Dual Diode 30A, 1200V Stealth⑩ Dual Diode 30A, 1200V Stealth Dual Diode
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| File Size |
116.05K /
6 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
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| OCR Text |
...
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400...5
ZthJC, TRANSIENT THERMAL IMPEDANCE
E ts *
10 K/W 0.2 0.1 0.05 10 K/W 0.02
R,(K/W) 0.705 ... |
| Description |
Fast S-IGBT in npt-technology with soft fast recovery anti-parallel EmCon diode Fast S-IGBT in npt-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
266.40K /
13 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FGA25N120 FGA25N120AN FGA25N120ANTU
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| OCR Text |
...
Gate Charge, Q g [nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 100 Ic MAX (Pulsed) 5...5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 1E-5
Pdm Pdm t1 t1 t2 t2 Duty factor D = t1 // ... |
| Description |
Discrete, npt IGBT TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A
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| File Size |
457.90K /
7 Page |
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it Online |
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