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  12a 650v Datasheet PDF File

For 12a 650v Found Datasheets File :: 48    Search Time::1.203ms    
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    IRFIB5N65APBF

International Rectifier
Part No. IRFIB5N65APBF
OCR Text ...- DD A 400 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 25 Starting TJ , Junction Temperature ( C) 50 75 100 125 150 I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12...
Description SMPS MOSFET

File Size 215.65K  /  8 Page

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    IRFIB5N65 IRFIB5N65A

International Rectifier
Part No. IRFIB5N65 IRFIB5N65A
OCR Text ...clamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 700 720 740 760 780 800 ...
Description 650v Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=650v/ Rds(on)max=0.93ohm/ Id=5.1A)

File Size 108.28K  /  8 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFF12N65
OCR Text ...icon n-channel mosfet features 12a,650v,r ds (on)(max0. 7 8 )@v gs =10v ultra-low gate charge(typical 51.7 nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description thi s pow e r ...
Description Silicon N-Channel MOSFET

File Size 540.52K  /  7 Page

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    SFP12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. SFP12N65
OCR Text 12a,650v,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 30nC) Fast Switching Capability 100% Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced ...
Description Silicon N-Channel MOSFET

File Size 264.84K  /  7 Page

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    WFP12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFP12N65
OCR Text 12a,650v,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem ...
Description Silicon N-Channel MOSFET

File Size 612.69K  /  7 Page

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    STF11NM65N

STMICROELECTRONICS
Part No. STF11NM65N
OCR Text 12a - to-220/fp- d 2 /i 2 pak - to-247 second generation mdmesh? power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of d...
Description 12 A, 650 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 467.02K  /  18 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS12N65FT-O-F-N-B JCS12N65CT-O-C-N-B JCS12N65T
OCR Text ...f) tf Qg Qgs Qgd VDS =480V , ID=12a VGS =10V note 45 VDD=300V,ID=12a,RG=25 note 45 78 102 133 175 233 305 104 160 39 8.5 20 52 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise...
Description N-CHANNEL MOSFET

File Size 1,131.35K  /  10 Page

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    WFF12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. WFF12N65
OCR Text 12a,650v,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 51.7nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem ...
Description Silicon N-Channel MOSFET

File Size 623.15K  /  7 Page

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    SCS212AGHR

Rohm
Part No. SCS212aGHR
OCR Text ...ced temperature dependence 650v 12a v r i f q c ? features 18nc 1) shorter recovery time a w symbol ? construction silicon carbide epitaxial planer schottky diode parameter v v a a a v rm tube - type packaging reel size (mm) c scs212ag bas...
Description SiC Schottky Barrier Diode

File Size 527.34K  /  6 Page

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    FMH25N50ES

Fuji Electric
Part No. FMH25N50ES
OCR Text ...fmc16n50es fml16n50es *2 0.52 12a 3.70.5v fmp12n50es fmv12n50es fmi12n50es fmc12n50es fml12n50es *2 0.79 8a 3.00.5v fmp08n50e fmv08n50e ...650v 0.97 9a 3.00.5v fmp09n65e fmv09n65e fmi09n65e fmc09n65e 1.47 7a 3.00.5v fmp07n65e fmv07n65e f...
Description This new power MOSFET realized the low switching loss and low switching noise

File Size 439.83K  /  2 Page

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