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  12a 600v Datasheet PDF File

For 12a 600v Found Datasheets File :: 769    Search Time::0.89ms    
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    CR12AM

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CR12aM
OCR Text .................................. 12a * VDRM ..............................................................400V/600v * IGT ..........................................................................30mA APPLICATION Switching mode power supply,...
Description MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

File Size 64.60K  /  6 Page

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    IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR
OCR Text ...00 A 0 .0 1 600 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum...
Description 600v Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600v, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET(减振钢板基本\u003d 600v电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2A

File Size 110.34K  /  9 Page

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    IRFBC40A IRFBC40

IRF[International Rectifier]
Part No. IRFBC40A IRFBC40
OCR Text ...00 A 0 .0 1 600 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum...
Description Power MOSFET(Vdss=600v, Rds(on)max=1.2ohm, Id=6.2A)

File Size 93.87K  /  8 Page

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    HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S12N60A4S9A

INTERSIL[Intersil Corporation]
Intersil, Corp.
Fairchild Semiconductor, Corp.
Part No. HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S12N60A4S9A
OCR Text ...s * >100kHz Operation at 390V, 12a * 200kHz Operation at 390V, 9A * 600v Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC * Low Conduction Loss * Temperature Compensating SABER Model http://w...
Description    600v, SMPS Series N-Channel IGBT
From old datasheet system
600v/ SMPS Series N-Channel IGBT
600v, SMPS Series N-Channel IGBT(600v,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247
600v, SMPS Series N-Channel IGBT(600v,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
600v, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 114.49K  /  10 Page

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    SM12JZ47 SM12JZ47A M12JZ47 SM12GZ47A SM12GZ47

TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
Part No. SM12JZ47 SM12JZ47A M12JZ47 SM12GZ47A SM12GZ47
OCR Text ...: VDRM = 400, 600v : IT (RMS) = 12a MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage and Repetitive Peak Reverse Voltage SM12GZ47 SM12GZ47A SM12JZ47 SM12JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM It di / dt PGM PG (A...
Description BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
AC POWER CONTROL APPLICATIONS 交流电源控制应用

File Size 196.28K  /  5 Page

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    SM8JZ47 SM8JZ47A SM8GZ47 SM8GZ47A

TOSHIBA[Toshiba Semiconductor]
Part No. SM8JZ47 SM8JZ47A SM8GZ47 SM8GZ47A
OCR Text ...Condition VDRM = 0.5xRated ITM 12a tgw 10s tgr 250ns iGP = IGTx2.0 1 2001-07-13 SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC Repetitive Peak Off-State Current I Gate Trigger Voltage II...
Description BI - DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS

File Size 221.88K  /  5 Page

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    2SK3012

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK3012
OCR Text 12a FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: MTO-3P Case E-pack (Unit : mm) Especially, input capacit...600v, VGS = 0V VGS = 30V, VDS = 0V ID = 8A, VDS = 10V ID = 8A, VGS = 10V ID = 1mA, VDS = 10V IS = 8A...
Description VX-2 Series Power MOSFET(600v 12a)

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    FQA12N60

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FQA12N60
OCR Text ... TM Features * * * * * * 12a, 600v, RDS(on) = 0.7 @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS !" " " TO-3P FQA ...
Description    600v N-Channel MOSFET
600v N-Channel MOSFET 12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 534.02K  /  8 Page

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    FQAF12N60

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF12N60
OCR Text ... 25 , Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev....
Description 600v N-Channel MOSFET 7.8 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 537.21K  /  8 Page

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    FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU
OCR Text ... 25 , Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev....
Description 600v N-Channel QFET
600v N-Channel MOSFET

File Size 538.95K  /  9 Page

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For 12a 600v Found Datasheets File :: 769    Search Time::0.89ms    
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