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  10v ms Datasheet PDF File

For 10v ms Found Datasheets File :: 14775    Search Time::2.265ms    
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    CD4538 CD4538BC CD4538BCM CD4538BCN CD4538BCWM

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. CD4538 CD4538BC CD4538BCM CD4538BCN CD4538BCWM
OCR Text ...el Input Voltage VDD = 5V VDD = 10v VDD = 15V VDD = 5V VDD = 10v VDD = 15V VDD = 5V VDD = 10v VDD = 15V |IO| < 1 A VDD = 5V, VO = 0.5V or 4....ms ms ms s s s % % % 300 150 100 600 300 220 ns ns ns Conditions Min Typ 100 50 40 Max 200 100 80 Un...
Description Quadruple Operational Amplifier 14-TSSOP 0 to 70 4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, PDIP16
Dual Precision Monostable

File Size 133.88K  /  11 Page

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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text ...ditions VGS = 0 ID = 1mA VGS = 10v VGS = 10v VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10v VDS = 0.5...ms VDD 50V (from 6mm down drain lead pad to centre of die) A V ns TJ = 25C 1.5 300 3 8.7 ...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...ditions VGS = 0 ID = 1mA VGS = 10v VGS = 10v VDS = VGS 1 Min. 100 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coeffic...ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to ...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...ditions VGS = 0 ID = 1mA VGS = 10v VGS = 10v VDS = VGS 1 Min. 100 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coeffic...ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to ...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...S = V GS, ID = 250A --- S VDS = 10v, ID = 4.0A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 7...ms-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.0...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...ditions VGS = 0 ID = 1mA VGS = 10v VGS = 10v VDS = VGS 1 Min. 200 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coeffic...ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to ...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...ditions VGS = 0 ID = 1mA VGS = 10v VGS = 10v VDS = VGS 1 Min. 200 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coeffic...ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to ...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...MOSFET RDS(on) max 0.40W@VGS = 10v VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully...ms -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.00...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...Continuous Drain Current, VGS @ 10v Continuous Drain Current, VGS @ 10v Pulsed Drain Current Power Dissipation Power Dissipation Linear Der...ms T O J E DE C O U TL IN E T O -220 AB . 4 HE A TS IN K & LE A D M E AS U R E ME NT S D O NO T IN C...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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For 10v ms Found Datasheets File :: 14775    Search Time::2.265ms    
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