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  10-to-4 Datasheet PDF File

For 10-to-4 Found Datasheets File :: 597566    Search Time::9.968ms    
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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...t sho ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW Ta = 25C 0.3 0 50 100 150 Ambient Temperature Ta (C) -10 -30 -100 -300 Collector to Emiter Voltage VCE (V) Typical Output Characteristics -500 Collector current IC (mA) 00 -1 ...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...ector power dissipation Pc (W) -10 -3 iC (peak) -1.0 -0.3 -0.1 -0.03 Area of Safe Operation PW =1 Collector Current IC (A) ms 8 IC (max) PW = 10 ms (1 Shot) D (T C O C = pe 25 rat C ion ) (1 S hot ) 4 0 50 100 C...
Description Silicon PNP Epitaxial

File Size 34.49K  /  5 Page

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    2SA2004

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2004
OCR Text ...E = 0 VCE = -60 V, IE = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -5 A IC = -5 A, IB = - 0.25 A IC = -5 A, IC = - 0.25 A IC = -4 A, IB1 = -400 mA IB2 = 400 mA, VCC = 50 V 0.2 0.1 0.5 -60 100 30 -1.2 -1.7 0.5 0.15 1.0 V...
Description    Silicon PNP epitaxial planer type

File Size 32.59K  /  1 Page

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2519 No.6305-1/5 2SA2011/2SC5564 C...to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.71K  /  5 Page

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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2520 No.6306-1/5 2SA2012/2SC5565 C...to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Vol...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 48.24K  /  5 Page

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52501TS KT TA-3260 No.6307-1/5 2SA2013/2SC5566 Conti...to-Emitter Saturation Voltage VCE(sat) IC=(-)2A, IB=(-)100mA Base-to-Emitter Saturation Voltage Coll...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 48.85K  /  5 Page

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    2SA2016 2SC5569

SANYO[Sanyo Semicon Device]
Part No. 2SA2016 2SC5569
OCR Text ...ings (-50)80 (-)50 (-)6 (-)7 (-)10 (-)1.2 1.3 3.5 150 -55 to +150 Unit V V V A A A W W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Outpu...
Description    DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.94K  /  5 Page

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    2SA2018 2SA2030 2SA2119K

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2018 2SA2030 2SA2119K
OCR Text ...a=25C Ta= -40C 200 100 50 20 10 5 2 1 0 200 100 50 20 10 5 2 Ta=125C Ta=25C Ta= -40C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) ...TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 ...
Description Low frequency transistor

File Size 78.51K  /  3 Page

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    2SA2022 2SC5610

Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Part No. 2SA2022 2SC5610
OCR Text ...it:mm 2041A [2SA2022/2SC5610] 10.0 3.2 3.5 7.2 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * High allowable power dissipation. 4.5 2.8 ...
Description NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML
From old datasheet system

File Size 50.43K  /  5 Page

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    2SA2023 2SC5611

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2023 2SC5611
OCR Text ...er SANYO : TO126ML Tc=25C 10 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Sy...
Description 60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications

File Size 40.45K  /  4 Page

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