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Hitachi America Ltd
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| Part No. |
HM52Y64165FTT-75
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| OCR Text |
1-Mword x 16-bit x 4-bank/2-Mword x 8-bit x 4-bank /4-Mword x 4-bit x 4-bank
ADE-203-974 (Z) Preliminary Rev. 0.0 Oct. 30, 1998
Description
The Hitachi HM52Y64165F is a 64-Mbit SDRAM organized as 1048576-word x 16-bit x 4 bank. The Hit... |
| Description |
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| File Size |
1,291.48K /
56 Page |
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Mitsubishi
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| Part No. |
M6MGB_T160S2BVP M6MGB E99003_A
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| OCR Text |
1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI LSIs
DESCRIPTION FEATURES The MIT... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
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| File Size |
255.86K /
30 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP E99004_A
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| OCR Text |
1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
DESCRIPTION
FEATURES
The MITSUBISHI M6MGB/T... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
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| File Size |
254.76K /
30 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT162S2BVP
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| OCR Text |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
M6MGB/T162S2BVP
MITSUBISHI LSIs
DESCRIPTION
FEATURES
* Access time The... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
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| File Size |
233.16K /
29 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP E99006_A
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| OCR Text |
1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI LSIs
DESCRIPTION
FEATURES
The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi *... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
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| File Size |
237.13K /
29 Page |
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it Online |
Download Datasheet |
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hitachi
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| Part No. |
HM5118160BSERIES 5118160B
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| OCR Text |
...a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160B offers Fast Page Mode as a high speed access mode.
Features
* * * Single 5 V (10%) ... |
| Description |
From old datasheet system
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| File Size |
245.70K /
27 Page |
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hitachi
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| Part No. |
HM5118165ASERIES 5118165A
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| OCR Text |
...a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165A offers Extended Data Out (EDO) Page Mode as a high speed access mode. It has package va... |
| Description |
From old datasheet system
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| File Size |
301.00K /
33 Page |
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it Online |
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Price and Availability
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