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				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.0 (Nov. 2002) - First release. CMOS SDR...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...03) - First release. Revision 0.1 (November, 2003) - completed DC characteristics. Revision 0.2 (November, 2003) - Preliminary spec release. Preliminary CMOS SDRAM Rev. 0.2 November. 2003 SDRAM 128Mb F-die (x4, x8, x16) Prelimin...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text	...atency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation * DQM for masking * Auto & self...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
File Size	124.69K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	1.0 August. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 ...2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2...2 (June. 2003) - Added 166MHz speed bin in x16 Revision 1.3 (September. 2003) - Corrected typo in or...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX26C4000B MX26C4000BMC-10 MX26C4000BMC-12 MX26C4000BMC-15 MX26C4000BMC-90 MX26C4000BMI-10 MX26C4000BMI-12 MX26C4000BMI-15 MX26C4000BMI-90 MX26C4000BPC-10 MX26C4000BPC-12 MX26C4000BPC-15 MX26C4000BPC-90 MX26C4000BPI-10 MX26C4000BPI-12 MX26C4000BPI-15 MX26C4000BPI-90 MX26C4000BQC-10 MX26C4000BQC-12 MX26C4000BQC-15 MX26C4000BQC-90 MX26C4000BQI-10 MX26C4000BQI-12 MX26C4000BQI-15 MX26C4000BQI-90 MX26C4000BTC-10 MX26C4000BTC-12 MX26C4000BTC-15 MX26C4000BTC-90 MX26C4000BTI-10 MX26C4000BTI-15 MX26C4000BTI-12
OCR Text	... A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A18 A17 A14 A13 A8 A9 A11 OE A10 CE Q7 Q6 Q5 Q4 Q3 32 PLCC A12 A15 A16 A18 4 1 32 30 29 A17 A7 A6 A5 A4 A3...
Description	4m-bit [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
File Size	956.57K / 20 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
Part No.	Q67100-Q2099 HYM328025GS-60 HYM328025GS-50 HYM328025S-60 HYM328025S-50 Q67100-Q2098 Q67100-Q2330 HYM328025S
OCR Text	...* * * Semiconductor Group 1 9.96 HYM328025S/GS-50/-60 8M x 32-Bit EDO-Module The HYM 328025S/GS-50/-60 is a 32 MByte DRAM mod...2 F ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ is described in the data sheet a...
Description	8M x 32 Bit DRAM Module 8M x 32-Bit EDO-DRAM Module
File Size	55.87K / 11 Page	View it Online	Download Datasheet

				Winbond
Part No.	W981208AH W981208A
OCR Text	... latency: 2 and 3 Burst Length: 1, 2, 4, 8 , and full page Burst read, Single Writes Mode Byte data controlled by DQM Power-Down Mode Auto-Precharge and controlled precharge 4k refresh cycles / 64ms Interface: LVTTL Package: TSOP II 54 pin,...
Description	From old datasheet system 4M x 8 bit x 4 Banks SDRAM
File Size	2,167.58K / 44 Page	View it Online	Download Datasheet

				WINBOND[Winbond]
Part No.	W981208BH
OCR Text	...e accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible...
Description	From old datasheet system 4M x 4 BANKS x 8 BIT SDRAM
File Size	1,498.87K / 41 Page	View it Online	Download Datasheet

For 1 2 4m-bit Found Datasheets File :: 3296 Search Time::3.922ms
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