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Fairchild Semiconductor
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| Part No. |
FDP3652NL
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| OCR Text |
...o case to-220, to-263, to-262 1.0 o c/w r ja thermal resistance junction to ambient to-220, to-263, to-262 (note 2) 62 o c/w r ja thermal ...61a, v gs = 10v - 0.014 0.016 ? i d = 30a, v gs = 6v - 0.018 0.026 i d = 61a, v gs = 10v, t ... |
| Description |
N-Channel PowerTrench MOSFET, 100V, 61A, 0.016 Ohms
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| File Size |
199.77K /
11 Page |
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Comset Semiconductors
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| Part No. |
BSS60A
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| OCR Text |
...ector-emitter voltage v be = 0 bss60a 45 v bss61a 60 bss62a 80 v ebo emitter-base voltage 5 v i c collector current i c 1 ...61a-62a comset semiconductors 2 / 3 tc=25c unless otherwise noted symbol ratings test con... |
| Description |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS
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| File Size |
116.96K /
3 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP61N20
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| OCR Text |
0.041 @VGS = 10 V * Low gate charge ( typical 58 nC) * Low Crss ( typical 80 pF) * Fast switching * 100% avalanche tested * Improved dv/dt c...61A VGS = 10V
(Note 4, 5) (Note 4, 5)
VDD = 100V, ID = 61A RG = 25
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40 215 125 170... |
| Description |
200V N-Channel MOSFET
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| File Size |
592.37K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL3102PBF
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| OCR Text |
...
l
D
VDSS = 20V RDS(on) = 0.013
G S
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC ...61A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25... |
| Description |
HEXFET Power MOSFET
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| File Size |
128.67K /
7 Page |
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it Online |
Download Datasheet |
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