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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-720639
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| OCR Text |
0 Description
AMI Semiconductor's AMIS-720639 (PI3039) contact image sensor (CIS) sensor chip is a linear array image sensor chip with a 60...42m. The size of each chip without the scribe lines is 8080m by 360m and each sensor chip has six bo... |
| Description |
600dpi CIS Sensor Chip
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| File Size |
285.82K /
10 Page |
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ETC AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4606
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| OCR Text |
...J=125C 1 20 22.5 31.3 34.5 15.4 0.76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=10V, VDS=15V, ID=6.9A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=6.9A, dI/dt=100A/s 4.1 20.6 5.2 16.5 7.8 28 38 42 1.9... |
| Description |
LJT 55C 55#22D PIN RECP Complementary Enhancement Mode Field Effect Transistor
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| File Size |
423.51K /
9 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4611L AO4611
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| OCR Text |
...urrent TJ=125C 1 40 20 34 22 27 0.74 1 3 1920 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 155 116 0.65 47.6 VGS=10V, VDS=30V, ID=6.3A 24.2 6 14.4 7.6 VGS=10V, VDS=30V, RL=4.7, RGEN=3 IF=6.3A, dI/dt=100A/s
2
Min 60
Typ
Max
Un... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
159.31K /
7 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4700L AO4700
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| OCR Text |
...TTKY VDS (V) = 30V, IF = 4A, VF<0.5V@3A
K
G S A
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current
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| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
118.67K /
5 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4812L AO4812
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| OCR Text |
...J=125C 1 20 22.5 31.3 34.5 15.4 0.76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=10V, VDS=15V, ID=6.9A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=6.9A, dI/dt=100A/s 4.1 20.6 5.2 16.5 7.8 7 6.2 30 7.5... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.41K /
4 Page |
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Alpha & Omega Semicondu... AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO8403L AO8403
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| OCR Text |
...=-1.8V, ID=-3A VDS=-5V, ID=-4A -0.3 -25 -0.55 35 48 45 8 56 16 -0.78 Min -20 -1 -5 1 10 -1 A 42 60 52 70 -1 -2.2 1750 m m m S V A pF pF pF 21 nC nC nC ns ns ns ns ns nC Typ Max Units V A A A
gFS VSD IS
Forward Transconductance Diode ... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
101.88K /
4 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP606L AOP606
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| OCR Text |
... TJ=125C 1 40 17.8 32.2 19.7 30 0.74 1 4 1920 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 155 116 0.65 47.6 VGS=10V, VDS=30V, ID=7.9A 24.2 6 14.4 7.4 VGS=10V, VDS=30V, RL=3.9, RGEN=3 IF=7.9A, dI/dt=100A/s
2
Min 60
Typ
Max
Un... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
208.55K /
7 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP610L AOP610
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| OCR Text |
...
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel+schottky and p-channel Symbol Parameter A t 10s Maximum Junction-to-Ambient RJA A Steady-State Maximum Junction-to-Ambien... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
138.17K /
7 Page |
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Sumida, Corp. SUMIDA[Sumida Corporation]
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| Part No. |
CDRH4D28C CDRH4D28CNP100NB CDRH4D28CNP100NC
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| OCR Text |
...
5
6.
4
4.
4.
0
( 1.1H - 100H )
5.1M AX.
CDRH4D28C
Parts No. 1R0 1R1 1R2 1R5 1R8 2R0 2R2 2R3 2R7 3R2 3R3 3R9 4R7...42m( 33.3m) 2.3 29m( 23.0m) 2.6 22m( 17.5m) 3.8 D.C.R.( ) : Max.(Typ.) Temperature Rise Rated Curre... |
| Description |
1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD ROHS COMPLIANT POWER INDUCTORS (SMD Type)
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| File Size |
213.95K /
1 Page |
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Price and Availability
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