0.35-4.80v pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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0.35-4.80v Datasheet PDF File

For 0.35-4.80v Found Datasheets File :: 3875 Search Time::7.75ms
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				International Rectifier
Part No.	IRLR120NPBF IRLR/U120NPBF
OCR Text	...FET D VDSS = 100V RDS(on) = 0.185 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processi...35 48 0.32 16 85 6.0 4.8 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C...
Description	Surface Mount (IRLR120N) HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	291.64K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLI520NPBF
OCR Text	0.18 w i d =8.1a l logic-level gate drive l advanced process technology l isolated package l high voltage isolation = 2.5kvrms ? l sink to...35 p d @t c = 25c power dissipation 30 w linear derating factor 0.20 w/c v gs gate-to-source volta...
Description	100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
File Size	151.33K / 8 Page	View it Online	Download Datasheet

				Supertex, Inc
Part No.	HV2203PJ-G HV2203FG-G
OCR Text	... (ja): 48-Lead LQFP (FG) Value -0.5V to +6.5V 170V -0.5V to VNN+170V +0.5V to -170V -0.5V to VDD +0.3V VNN to VPP 1.0A -65C to 150C 61OC/W 2...35 20 10 300 500 50 -50 50 -50 50 1.5 1.5 1.5 1.5 1.5 1.5 4.0 10 10 Max 20 5.0 300 500 4.0 10 10...
Description	Low Charge Injection, 8-Channel High Voltage Analog Switch
File Size	834.00K / 9 Page	View it Online	Download Datasheet

				Supertex, Inc
Part No.	HV2116 HV2116PJ HV2116X
OCR Text	... temperature Power dissipation -0.5V to +18V 174V -0.5V to +160V +0.5V to -160V -0.5V to VDD +0.3V VNN to VPP 3.0A -65C to +150C 1.2W *Ab...35 32 30 23 30 27 20 LETE - - OBSO Units Test Conditions ISIG = 5mA ohms ISIG = 5mA ISIG = 5mA %...
Description	8-Channel High Voltage Analog Switch
File Size	87.24K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFR3411
OCR Text	...on 130 w linear derating factor 0.83 w/ c v gs gate-to-source voltage 20 v i ar avalanche current 16 a e ar repetitive avalanche energy...35 ??? i d = 16a t d(off) turn-off delay time ??? 39 ??? r g = 5.1 ? t f fall time ??? 35 ??? v gs...
Description	100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	111.48K / 10 Page	View it Online	Download Datasheet

				M.S. Kennedy Corp.
Part No.	MSK155E MSK155H
OCR Text	...bandwidth settling time to 0.1% capacitive load transfer characteristics slew rate open loop voltage gain max. 40 30 30 ...35 20 20 20 0.1 2 10 5 20 - 10 5 110 10 33.5 30 55 2 - 10 100 min. 10 - - - - - - - - - - - 95 - - 2...
Description	HIGH POWER DUAL OPERATIONAL AMPLIFIER
File Size	281.25K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FM600TU-3A FM600TU-07A
OCR Text	...-- -- Limits Typ. -- 6 -- 1.6 3.0 0.48 0.91 0.7 1.0 -- -- -- 1950 -- -- -- -- -- 8.0 -- -- -- 0.1 0.09 Max. 1 7.3 1.5 2.2 -- 0.66 -- -- -- 1...35 40 45 GATE RESISTANCE RG () DRAIN CURRENT ID (A) 101 HALF-BRIDGE SWITCHING CHARACTERISTI...
Description	HIGH POWER SWITCHING USE INSULATED PACKAGE
File Size	105.03K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HIP4081 HIP4081IB HIP4081IP
OCR Text	... . . . . . . . . . . . . . . . -0.3V to 16V Logic I/O Voltages . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on A...35 1.0 -75 +1 2.7 -135 -10 0.8 -65 +10 V V mV A A IDD IDDO ICC ICCO IAHB, IBHB All Inputs = 0V Outpu...
Description	80V/2.5A Peak/ High Frequency Full Bridge FET Driver 80V/2.5A Peak, High Frequency Full Bridge FET Driver
File Size	215.41K / 18 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	FS5VSH-3
OCR Text	... 10.5max. 1.3 1.5max. qwe r 4.5 0 +0.3 ? 3.0 +0.3 ?.5 1 5 0.8 8.6 0.3 9.8 0.5 1.5max. (1.5) 0.5 4.5 2.6 0.4 b q gate w ...35 w i d .............................................................................................
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.19K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB47N10S-33 IPI47N10S-33 IPP47N10S-33
OCR Text	...ce, junction - case r thjc - - 0.85 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. f...35 40 45 a 55 spp47n10 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t ...
Description	SIPMOS Power-Transistor Feature N-Channel Enhancement mode
File Size	536.59K / 8 Page	View it Online	Download Datasheet

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