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  .5-8ghz Datasheet PDF File

For .5-8ghz Found Datasheets File :: 968    Search Time::2.265ms    
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    ADL855HD ADL855HD-370CM ADL855HD-373CM ADL855HD-745PM

Advanced Digital Logic, Inc.
Part No. ADL855HD ADL855HD-370CM ADL855HD-373CM ADL855HD-745PM
OCR Text 5 inch ADL855HD - Intel Pentium M / Celeron M 1.0GHz - 1.8GHz Features * Intel(R) Pentium(R) M / Celeron(R) M, 1.0GHz - 1.8GHz * Intel(R) 855GME / ICH4, 400MHz FSB * Power Management (APM 1.2 plus features) * Up to 2GB DDR 333Mhz SDRAM *...
Description Intel Pentium M / Celeron M 1.0GHz - 1.8GHz

File Size 202.50K  /  2 Page

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    HMC713LP3E

Hittite Microwave Corporation
Part No. HMC713LP3E
OCR Text ...e Time Supply Voltage: +2.7 to +5.5V Power-Down Mode Excellent Stability over Temperature 16 Lead 3x3 mm SMT Package: 9mm2 12 Functional...8GHz 3.9GHz 7GHz 8GHz 23 21 19 17 15 0 1 2 +25C +85C -40C 23 21 19 17 15 12 POWER DETEC...
Description 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz

File Size 564.88K  /  12 Page

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text ...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain ...8GHz VCE = Parameter 15 dB dB 13 10V 10V 3V 2V G 18 G 5V 3V 12 11 10 9 16 2V...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.05K  /  7 Page

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    BFP193 Q62702-F1282 BFP193Q62702-F1282

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text ...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain ...8GHz VCE = Parameter 13 dB dB 11 10V 5V 3V 2V G 10V 16 5V 3V G 10 9 8 14 2...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

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    MAX14998ETOT MAX14998 MAX4998

Maxim Integrated Products
Part No. MAX14998ETOT MAX14998 MAX4998
OCR Text ...X4998 is available in a 3.5mm x 5.5mm, 28-pin TQFN package with exposed pad, and the MAX14998 is available in a 3.5mm x 9mm, 42-pin TQFN pac...8GHz (Figure 2) f = 1.35GHz (Figure 2) f = 0.8GHz (Figure 2) f = 1.35GHz (Figure 2) f = 0.8GHz (Figu...
Description Two-Lane and Four-Lane DisplayPort Passive Switches with Separate AUX/HPD Control

File Size 703.56K  /  10 Page

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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ... Values typ. max. Unit fT 4 5.5 0.85 0.4 4.6 - GHz pF 1.4 dB 2.5 4 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitanc...8GHz VCE = Parameter 10 dB 10V G G 5V 3V 6 2V 8 1V 6 4 1V 2 4 0.7V...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

File Size 49.50K  /  6 Page

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    Q62702-F1382 BFP183

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
Part No. Q62702-F1382 BFP183
OCR Text ...ion Symbol Values 12 20 20 2 65 5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1)...8GHz VCE = Parameter 16 dB 10V 5V dB 10V G 18 G 12 3V 2V 3V 2V 16 10 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器)
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

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    Q62702-F1492 BFR182W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1492 BFR182W
OCR Text ...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1...8GHz VCE = Parameter 14 dB 10V 3V dB 10V 3V 2V G G 10 16 2V 8 14 6 12 1...
Description NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  7 Page

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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text ...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 280W Electrical Characteristics at TA = 25C, unless...8GHz VCE = Parameter 14 dB 2V 10V 3V 2V G 16 G 10 14 1V 12 0.7V 8 1V 6 ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    EFE960BVR-5759

Excelics Semiconductor, Inc.
Part No. EFE960BVR-5759
OCR Text 5.70-5.90GHz 4-Watt Partially Matched Power FET FEATURES * * * * * * * 5.70-5.90 GHz Bandwidth +36.0 dBm Output Power at 1dB Compression...8GHz f = 5.8GHz TYP 36.0 9.0 25 1300 MAX UNITS dBm dB % Power Added Efficiency at 1dB ...
Description 5.70-5.90GHz 4-Watt Partially Matched Power FET

File Size 117.29K  /  3 Page

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