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SHENZHEN YONGERJIA INDU...
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| Part No. |
MBT6517LT1-15
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| OCR Text |
...n hfe2 30 vce= 10v ic= 10ma dc current gain hfe3 30 200 vce= 10v ic= 30ma dc current gain hfe4 20 200 vce= 10v ic= 50ma dc current gain hfe5 15 vce= 10v ic= 100ma collector-emitter saturation v o ltage ... |
| Description |
NPN EPITAXIAL SILICON TRANSISTOR
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| File Size |
61.13K /
1 Page |
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it Online |
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BRIGHT LED ELECTRONICS ...
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| Part No. |
BS-A362RD
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| OCR Text |
...d voltage per segment vf i f =10ma - 2.1 2.5 v luminous intensity per segment iv i f =10ma - 3.0 - mcd reverse current per segment i r v r =5v - - 100 a peak wave length p i f =10ma - 568 - nm dominant wave length ... |
| Description |
8.00mm (0.31) high single seven segments display
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| File Size |
189.45K /
3 Page |
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it Online |
Download Datasheet |
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SeCoS Halbleitertechnol...
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| Part No. |
SSK3018K-15
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| OCR Text |
... v gs =0 - - 8 v gs =4v, i d =10ma static drain-source on-resistance r ds(on) - - 13 ? v gs =2.5v, i d =1ma forward transconductance g fs 20 - - ms v ds =3v, i d =10ma dynamic characteristics 1 input capacitance c iss - 1... |
| Description |
N-Channel MOSFET
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| File Size |
282.34K /
2 Page |
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it Online |
Download Datasheet |
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Taiwan Semiconductor Co...
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| Part No. |
1N4148W-GRB
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| OCR Text |
...recovery test conditions : i f =10ma, i r =10ma, r l =100 ? , i rr =1ma document number ds_s1310003 version : a13 mechanical data per mil-std-202, method 208 guaranteed thermal resistance (junction to ambient) (note... |
| Description |
High Speed SMD Switching Diode
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| File Size |
182.61K /
3 Page |
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it Online |
Download Datasheet |
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Taiwan Semiconductor Co...
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| Part No. |
1N4148W-G-15
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| OCR Text |
...recovery test conditions : i f =10ma, i r =10ma, r l =100 ? , i rr =1ma document number: ds_s1405027 version: c15 2.5 30 i f =150ma parameter - v r =75v v r =25v, tj=150c - - a repetitive peak reverse voltage work peak reverse voltage 100 1... |
| Description |
High Speed SMD Switching Diode
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| File Size |
182.61K /
4 Page |
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it Online |
Download Datasheet |
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