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  vcesatvcesat Datasheet PDF File

For vcesatvcesat Found Datasheets File :: 8707    Search Time::0.984ms    
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    TCLT1009 TCLT1008 TCLT1001 TCLT1003 TCLT1007 TCLT1002 TCLT1006 TCLT1000 TCLT1005

VISAY[Vishay Siliconix]
Part No. TCLT1009 TCLT1008 TCLT1001 TCLT1003 TCLT1007 TCLT1002 TCLT1006 TCLT1000 TCLT1005
OCR Text ...mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 110 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 10 mA...
Description    Optocoupler with Phototransistor Output

File Size 412.38K  /  12 Page

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    BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702-C2129 Q62702-C2127 BCP68 BCP68-25

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702-C2129 Q62702-C2127 BCP68 BCP68-25
OCR Text ...8 BCP 68-10 BCP 68-16 BCP 68-25 VCEsat VBE - - 0.6 - - 1 50 85 85 100 160 60 - - - 100 160 250 - - - 375 160 250 375 - 0.5 V - - - - 100 100 100 nA A Values typ. max. Unit 20 25 25 5 - - - - - - - - V nA - IC = 1 A,...
Description From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)

File Size 136.63K  /  4 Page

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    BCP68 BCP68-25 BCP68_3

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BCP68 BCP68-25 BCP68_3
OCR Text ... Fig.2 DC current gain BCP68-25 VCEsat VBE Cc fT h FE1 ----------h FE2 collector-emitter saturation voltage IC = 1 A; IB = 100 mA base-emitter voltage collector capacitance transition frequency DC current gain ratio of the complementary pai...
Description From old datasheet system
NPN medium power transistor

File Size 45.06K  /  8 Page

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    BCX69-10 BCX69-16 BCX69-25 Q62702-C1867 BCX69 Q62702-C1869 Q62702-C1714 Q62702-C1868

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
Part No. BCX69-10 BCX69-16 BCX69-25 Q62702-C1867 BCX69 Q62702-C1869 Q62702-C1714 Q62702-C1868
OCR Text ... 5 V, f = 20 MHz fT - 100 - MHz VCEsat VBE - - 0.6 - - 1 V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 hFE 50 85 85 100 160 60 - - - 100 160 250 - - - 375 160 250 375 - 0.5 V - - - - 100 100 10 nA A A Values typ. max. Unit 20 25 5 -...
Description From old datasheet system
PNP Silicon AF Transistors (For general AF applications High collector current)

File Size 145.04K  /  4 Page

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    BFS17AR BFS17AW BFS17A

Vishay Siliconix
Vishay Telefunken
Part No. BFS17AR BFS17AW BFS17A
OCR Text ...100 nA IEBO 10 mA V(BR)CEO 15 V VCEsat 0.1 0.6 V hFE 20 50 150 hFE 20 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, ...
Description From old datasheet system
Silicon NPN Planar RF Transistor

File Size 163.18K  /  10 Page

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    BFS17P Q62702-F940 BFS17PQ62702-F940

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS17P Q62702-F940 BFS17PQ62702-F940
OCR Text ...r-emitter saturation voltage VCEsat IC = 10 mA, IB = 1 mA Semiconductor Group 2 Aug-02-1996 BFS 17P Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics of any sin...
Description NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
CAP 15000PF X7R 250VAC X2 2220
TRANSISTOR UHF BIPOLAR BREITBAND
From old datasheet system

File Size 48.51K  /  5 Page

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    BFS17R BFS17W BFS17

Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
Vishay Siliconix
Part No. BFS17R BFS17W BFS17
OCR Text ...100 nA IEBO 10 mA V(BR)CEO 15 V VCEsat 0.75 V hFE 20 100 150 hFE 20 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, IC...
Description Silicon NPN Planar RF Transistor
From old datasheet system

File Size 148.66K  /  10 Page

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    BFS17S Q62702-F1645

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS17S Q62702-F1645
OCR Text ...r-emitter saturation voltage VCEsat IC = 10 mA, IB = 1 mA Semiconductor Group 2 Dec-18-1996 BFS 17S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics of any sin...
Description NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  5 Page

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    PDTC114EEF PDTC114

PHILIPS[Philips Semiconductors]
Part No. PDTC114EEF PDTC114
OCR Text ...fied. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on vol...
Description NPN resistor-equipped transistor

File Size 49.58K  /  8 Page

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    PDTC114EK

PHILIPS[Philips Semiconductors]
Part No. PDTC114EK
OCR Text ...fied. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on vo...
Description NPN resistor-equipped transistor

File Size 66.34K  /  8 Page

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For vcesatvcesat Found Datasheets File :: 8707    Search Time::0.984ms    
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