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Boca Semiconductor Corp...
BOCA[Boca Semiconductor Corporation]
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| Part No. |
2N5682 2N5681 2N5680 2N5679
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| OCR Text |
... W mW/deg C W mW/deg C deg C
VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector...120V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150... |
| Description |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
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| File Size |
40.73K /
2 Page |
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Continental Device Indi...
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| Part No. |
2N5680 2N5681NPN 2N5680PNP
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| OCR Text |
...5682 collector -emitter voltage vceo 100 120 v collector -base voltage vcbo 100 120 v emitter -base voltage vebo 4.0 v collector current con...120v, ie=0 - <1.0 ua iceo vce=70v, ib=0 <10 - ua vce=80v, ib=0 - <10 ua icex vce=... |
| Description |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
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| File Size |
136.52K /
3 Page |
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it Online |
Download Datasheet |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BDS19SMD BDS18SMD BDS19 BDS18
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| OCR Text |
... unless otherwise stated)
VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage...120V -120V
BDS19 -150V -150V
-5V -8A -2A 50W -65 TO 200C 200C
4/00
BDS18 BDS18SMD BDS19 BD... |
| Description |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
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| File Size |
69.15K /
3 Page |
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it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
Semelab(Magnatec)
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| Part No. |
2N5682 2N5681 2N5681SMD
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| OCR Text |
...c unless otherwise stated
VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector - Base Voltage(IE = 0) Collector - Emitter Voltage (IB = 0) Emitter -...120V 120V
-65 to +200C 200C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612... |
| Description |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor
NPN SILICON TRANSISTORS
Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管（TO-39金属封装，用于通用、放大器、开关电路）)
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| File Size |
21.43K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2575 NTE2574
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| OCR Text |
...ctor Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics: NTE2574: Cre = 2.7pF NTE2575: Cre = 4.0pF D Isolated TO220 Type ... |
| Description |
Silicon Complementary Transistors Video Output for HDTV
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| File Size |
21.31K /
2 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE324 NTE323
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| OCR Text |
...120V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon Complementary Transistors General Purpose
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| File Size |
21.71K /
2 Page |
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it Online |
Download Datasheet |
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