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  v-1.275 Datasheet PDF File

For v-1.275 Found Datasheets File :: 16276    Search Time::2.047ms    
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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...re Ts 85 C IC = 20 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N3 N4 Top view Fig.1 Simplified outline SOT343N. MIN. - - - - 60 - - TYP. MAX. UNIT - - - - 120 0.35 9...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...8 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gai...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

File Size 146.07K  /  13 Page

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    ELM339 ELM339P ELM339SM

ELM[ELM Electronics]
ETC
Part No. ELM339 ELM339P ELM339SM
OCR Text ...ical 5.0 Maximum Units 5.5 V V/ms Conditions see note 2 see note 3 1.0 VSS 0.85 VDD 2.4 0.15 VDD VDD 0.6 mA V V V V Current (sink) = 8.7mA Current (source) = 5.4mA see note 4 see note 5 VDD - 0.7 250 0 260 275 m...
Description    INFRARED REMOTE CONTROL
Interfrared remote control

File Size 26.20K  /  4 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...0 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to...1, 2 & 3 Weight of Module Typ. -- -- 0.1 -- -- 200 Max. 0.24 0.35 -- 4.0 3.0 -- Units C...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ....6 180 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may ca...1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specif...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ....0 550 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may ca...1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specif...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ... -55 to + 175 Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface ...1 02/27/01 IRF3703 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Br...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) 110 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power tr...1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ... -100 Typ. Max. Unit V -0.087 0.2 0.23 -4 -25 -250 -100 100 1400 600 200 31 3.7 7.0 60 13 35.2 35 85 85 65 -18 -72 -4.2 170 Negligible 5.0 13 1.0 0.12 30 280 3.6 V / C V S (E) A nA -2 6.2 pF nC ns SOURCE - D...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    L6562 FN9012 ISL6562 ISL656062E ISL656062EVAL1 ISL6562CB ISL6562CB-T

http://
INTERSIL[Intersil Corporation]
Part No. L6562 FN9012 ISL6562 ISL656062E ISL656062EVAL1 ISL6562CB ISL6562CB-T
OCR Text ...0.4 9.0 8.9 6.9 0.8 mA mA V V DAC and REFERENCE VOLTAGES Minimum DAC Programed Voltage Middle DAC Programed Voltage Maximum DAC Pro...1.050V DAC Programmed to 1.500V DAC Programmed to 1.825V VCC = 10V to 14V Percent of Nominal DAC Vol...
Description Microprocessor CORE Voltage Regulator Two-Phase Buck PWM Controller
PWM Controller, 2-Phase Current Mode, 5-Bit VID, Reg ?.8%, 1.05-1.825 Voltage, VRM 8.5

File Size 40.63K  /  5 Page

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