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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M60L2vR_04 APT50M60L2vR APT50M60L2vR04
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| OCR Text |
v(R) MOSFET
Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the ...500v, vGS = 0v) Zero Gate voltage Drain Current (vDS = 400v, vGS = 0v, TC = 125C) Gate-Source Leakag... |
| Description |
77 A, 500 v, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS v㈢ MOSFET POWER MOS v? MOSFET
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| File Size |
156.31K /
5 Page |
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MICROSEMI POWER PRODUCTS GROUP MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M60L2vFR_04 APT50M60L2vFR APT50M60L2vFR04 APT50M60L2vFRG
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| OCR Text |
v(R) FREDFET
Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the...500v, vGS = 0v) Zero Gate voltage Drain Current (vDS = 400v, vGS = 0v, TC = 125C) Gate-Source Leakag... |
| Description |
77 A, 500 v, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS v㈢ FREDFET POWER MOS v? FREDFET
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| File Size |
157.20K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M50L2LL_04 APT50M50L2LL APT50M50L2LL04
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| OCR Text |
...eak Diode Recovery
dv/ dt 5
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right t... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
94.20K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M50L2FLL_04 APT50M50L2FLL APT50M50L2FLL04
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| OCR Text |
...HARACTERISTICS
UNIT Amps volts v/ns ns
89 356 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (vGS ...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
1 Repetitive Rating: Pul... |
| Description |
POWER MOS 7 R FREDFET
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| File Size |
95.00K /
5 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M50JFLL_04 APT50M50JFLL APT50M50JFLL04
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| OCR Text |
...HARACTERISTICS
UNIT Amps volts v/ns ns C Amps
71 284 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right t... |
| Description |
POWER MOS 7 R FREDFET
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| File Size |
152.02K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M38JLL_04 APT50M38JLL APT50M38JLL04
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| OCR Text |
...eak Diode Recovery
dv/ 5 dt
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W...500v TJ 150C
APT Reserves the right to change, without notice, the specifications and informatio... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
151.88K /
5 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
FQN1N50CBU
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| OCR Text |
...l mosfet features ? 0.38 a, 500 v, r ds(on) = 6.0 ? @ v gs = 10 v ? low gate charge ( typical 4.9 nc ) ? low crss ( typical 4.1 pf) ? f...500v n-channel mosfet package marking and ordering information device marking device package reel si... |
| Description |
500v N-Channel MOSFET; Package: TO-92; No of Pins: 3; Container: Bulk 380 mA, 500 v, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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| File Size |
1,156.00K /
10 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5016SLL APT5016BLL APT5016BLL_03
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| OCR Text |
...iode Recovery
dv/ dt 5
Q
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right t... |
| Description |
POWER MOS 7 MOSFET
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| File Size |
105.24K /
5 Page |
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it Online |
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Fuji Electric Holdings Co., Ltd.
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| Part No. |
2SK2022-01MR
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| OCR Text |
... driving power - high voltage - v gs = 30v guarantee - avalanche proof > applications - switching regulators - ups - dc-dc converters - ge...500v t ch =25c 10 500 a v gs =0v t ch =125c 0,2 1,0 ma gate source leakage current ... |
| Description |
MOSFET MOSFET
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| File Size |
213.83K /
2 Page |
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it Online |
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Price and Availability
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