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  v 500v Datasheet PDF File

For v 500v Found Datasheets File :: 8290    Search Time::0.859ms    
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    MICROSEMI[Microsemi Corporation]
Part No. APT50M60L2vR_04 APT50M60L2vR APT50M60L2vR04
OCR Text v(R) MOSFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the ...500v, vGS = 0v) Zero Gate voltage Drain Current (vDS = 400v, vGS = 0v, TC = 125C) Gate-Source Leakag...
Description 77 A, 500 v, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS v㈢ MOSFET
POWER MOS v? MOSFET

File Size 156.31K  /  5 Page

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    MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
Part No. APT50M60L2vFR_04 APT50M60L2vFR APT50M60L2vFR04 APT50M60L2vFRG
OCR Text v(R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the...500v, vGS = 0v) Zero Gate voltage Drain Current (vDS = 400v, vGS = 0v, TC = 125C) Gate-Source Leakag...
Description 77 A, 500 v, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS v㈢ FREDFET
POWER MOS v? FREDFET

File Size 157.20K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT50M50L2LL_04 APT50M50L2LL APT50M50L2LL04
OCR Text ...eak Diode Recovery dv/ dt 5 v/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right t...
Description POWER MOS 7 R MOSFET

File Size 94.20K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT50M50L2FLL_04 APT50M50L2FLL APT50M50L2FLL04
OCR Text ...HARACTERISTICS UNIT Amps volts v/ns ns 89 356 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (vGS ...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 1 Repetitive Rating: Pul...
Description POWER MOS 7 R FREDFET

File Size 95.00K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT50M50JFLL_04 APT50M50JFLL APT50M50JFLL04
OCR Text ...HARACTERISTICS UNIT Amps volts v/ns ns C Amps 71 284 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right t...
Description POWER MOS 7 R FREDFET

File Size 152.02K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT50M38JLL_04 APT50M38JLL APT50M38JLL04
OCR Text ...eak Diode Recovery dv/ 5 dt v/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W...500v TJ 150C APT Reserves the right to change, without notice, the specifications and informatio...
Description POWER MOS 7 R MOSFET

File Size 151.88K  /  5 Page

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    TLP2630

TOSHIBA[Toshiba Semiconductor]
Part No. TLP2630
OCR Text ...~125 -40~85 260 2500 Unit mA mA v mA v v mW C C C vrms * t 1 msec duration. Recommended Operating Conditions Characteristic Input cu...500v, R.H. 60% f = 1MHz R.H. 60%, t = 5s vI-I = 500v vI-I = 500v f = 1MHz (Note 3) (Note 3) (Note 6)...
Description Photocoupler GaAlAs Ired & Photo IC
Degital Logic Isolation Tele.Communication Analog Data Equipment Control Microprocessor System Interface

File Size 193.63K  /  8 Page

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    Fairchild Semiconductor, Corp.
Part No. FQN1N50CBU
OCR Text ...l mosfet features ? 0.38 a, 500 v, r ds(on) = 6.0 ? @ v gs = 10 v ? low gate charge ( typical 4.9 nc ) ? low crss ( typical 4.1 pf) ? f...500v n-channel mosfet package marking and ordering information device marking device package reel si...
Description 500v N-Channel MOSFET; Package: TO-92; No of Pins: 3; Container: Bulk 380 mA, 500 v, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

File Size 1,156.00K  /  10 Page

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    ADPOW[Advanced Power Technology]
Part No. APT5016SLL APT5016BLL APT5016BLL_03
OCR Text ...iode Recovery dv/ dt 5 Q v/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right t...
Description POWER MOS 7 MOSFET

File Size 105.24K  /  5 Page

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    Fuji Electric Holdings Co., Ltd.
Part No. 2SK2022-01MR
OCR Text ... driving power - high voltage - v gs = 30v guarantee - avalanche proof > applications - switching regulators - ups - dc-dc converters - ge...500v t ch =25c 10 500 a v gs =0v t ch =125c 0,2 1,0 ma gate source leakage current ...
Description MOSFET MOSFET

File Size 213.83K  /  2 Page

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