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Infineon Technologies AG
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| Part No. |
IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01
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| OCR Text |
...ied parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =10v 120 a t c =100c, v gs =10v 2) 120 pulsed drain c...source voltage v gs - 20 v power dissipation p tot t c =25c 188 w operating and storage temperature ... |
| Description |
OptiMOS-T2 Power-Transistor
120 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
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| File Size |
157.35K /
9 Page |
 View
it Online |
Download Datasheet
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Xian Semipower Electron...
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| Part No. |
SW190N04A
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| OCR Text |
... symbol parameter value unit r thjc thermal resistance, junction to case 0.56 o c/w r thcs thermal resistance, case...source voltage 40 v i d continuous drain current (@t c =25 o c) 190* a continuous dr... |
| Description |
N-channel TO-220 MOSFET
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| File Size |
715.31K /
5 Page |
View
it Online |
Download Datasheet |
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Infineon
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| Part No. |
BUZ22SMD BUZ22E3045A BUZ22E3046
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| OCR Text |
...ratings parameter symbol values unit continuous drain current t c = 27 ?c i d 34 a pulsed drain current t c = 25 ?c i dpuls 136 avalanc...source voltage v gs 20 v power dissipation t c = 25 ?c p tot 125 w operating temperature t j -5... |
| Description |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
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| File Size |
85.86K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
BSP613P
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| OCR Text |
...wise specified parameter symbol unit value -2.9 -2.3 a continuous drain current t a = 25 c t a = 70 c i d pulsed drain current t a =...source voltage v gs 20 v power dissipation t a = 25 c p tot 1.8 w operating and storage temperatu... |
| Description |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
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| File Size |
86.30K /
9 Page |
View
it Online |
Download Datasheet |
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