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For tmb Found Datasheets File :: 2475    Search Time::0.907ms    
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    BUK9608-55

NXP Semiconductors
Philips Semiconductors
Part No. BUK9608-55
OCR Text ...mperature CONDITIONS RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 55 55 10 75 65 240 187 175 UNIT V V V A A A W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Huma...
Description TrenchMOS transistor Logic level FET

File Size 68.11K  /  8 Page

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    CR6627

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. CR6627
OCR Text ...C 134). SYMBOL Per amplifier VS tmb Tstg Note 1. To ensure proper thermal contact, a layer of heatsink compound should be applied between module and heatsink. supply voltage (DC) operating mounting base temperature; note 1 storage temperatu...
Description Triple video driver hybrid amplifier

File Size 47.44K  /  12 Page

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    IRF640 IRF640S

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. IRF640 IRF640S
OCR Text ...C Tj = 25 C to 175C; RGS = 20 k tmb = 25 C; VGS = 10 V tmb = 100 C; VGS = 10 V tmb = 25 C tmb = 25 C MIN. - 55 MAX. 200 200 20 16 11 64 136 175 UNIT V V V A A A W C 1 It is not possible to make connection to pin:2 of the SOT404 package ...
Description N-channel TrenchMOS transistor(N娌?? TrenchMOS ?朵?绠?
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 93.86K  /  9 Page

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    PH3230S PH3230S115

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PH3230S PH3230S115
OCR Text ...ce (diode forward) current (DC) tmb = 25 C peak source (diode forward) current tmb = 25 C; pulsed; tp 10 s Tj = 25 C; RGS 50 ; IDS(AL)R = 5 A; VDD = 15 V; duty < 0.1% unclamped inductive load; ID = 50 A; VDD 15 V; RGS = 50 ; VGS = 10 V; ...
Description N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET

File Size 87.13K  /  12 Page

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    PH3230

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PH3230
OCR Text ...rence data Conditions Tj = 25 C tmb = 25 C tmb = 25 C VGS = 10 V; ID = 25 A; Tj = 25 C VGS = 4.5 V; ID = 25 A; Tj = 25 C Typ 3.2 5.5 Max 30 50 42 150 3.7 7.3 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissipat...
Description N-channel enhancement mode field-effect transistor

File Size 94.11K  /  13 Page

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    PHD12N10E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD12N10E
OCR Text ...mperature CONDITIONS RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 100 100 30 14 10 56 75 175 175 UNIT V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mount...
Description PowerMOS transistor

File Size 78.59K  /  7 Page

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    PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3

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PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3
OCR Text ...C Tj = 25 C to 175C; RGS = 20 k tmb = 25 C; VGS = 10 V tmb = 100 C; VGS = 10 V tmb = 25 C tmb = 25 C MIN. - 55 MAX. 150 150 20 12.5 8.8 50 88 175 UNIT V V V A A A W C 1 It is not possible to make connection to pin:2 of the SOT404 or SOT...
Description N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 110.51K  /  12 Page

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    PHD44N06LT PHP44N06LT PHB44N06LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD44N06LT PHP44N06LT PHB44N06LT
OCR Text ...C Tj = 25 C to 175C; RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 55 55 13 44 31 176 114 175 UNIT V V V A A A W C 1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. September 199...
Description TrenchMOS transistor Logic level FET 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 80.20K  /  10 Page

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    PHD5N20E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD5N20E
OCR Text ...) SYMBOL PARAMETER ID IDM PD PD/tmb VGS EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and ...
Description PowerMOS transistor

File Size 50.47K  /  7 Page

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    PHD66NQ03LT PHP66NQ03LT PHB66NQ03LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD66NQ03LT PHP66NQ03LT PHB66NQ03LT
OCR Text ...data Conditions 25 C Tj 175 C tmb = 25 C; VGS = 10 V tmb = 25 C; VGS = 5 V total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 C VGS = 5 V; ID = 25 A; Tj = 25 C tmb = 25 C Typ 9.1 1...
Description Turret Lug, for 1.6mm panel thickness 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel TrenchMOS transistor

File Size 112.35K  /  14 Page

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