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ST Microelectronics
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| Part No. |
STRH8N10 STRH8N10S1 STRH8N10SG
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| OCR Text |
... effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occ... |
| Description |
Rad-Hard N-Channel 100V - 6A MOSFET
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| File Size |
776.01K /
17 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STRH40N6S1 STRH40N6SG
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| OCR Text |
... effect, bias circuit ) seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occ... |
| Description |
Rad-Hard N-Channel 60V - 35A MOSFET
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| File Size |
682.08K /
18 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4
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| OCR Text |
segr Resistant, P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity t... |
| Description |
7A, -100V, 0.300 Ohm, Rad Hard, segr Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, segr Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，segr性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ segr Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ segr Resistant/ P-Channel Power MOSFETs
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| File Size |
58.67K /
8 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STRH12P10GY1 STRH12P10GYG STRH12P10GYT
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| OCR Text |
...effect, bias circuit ). seb and segr tests have been performed with a fluence of 3e+5 ions/cm2 . the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb oc... |
| Description |
Rad-Hard P-channel 100 V, 12 A Power MOSFET
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| File Size |
404.24K /
18 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STRH40P10HY1 STRH40P10HYG STRH40P10HYT
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| OCR Text |
...effect, bias circuit ). seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occ... |
| Description |
Rad-Hard P-Channel 100 V - 40A MOSFET
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| File Size |
669.40K /
18 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7408 FN4637
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| OCR Text |
segr Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity t... |
| Description |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, segr Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, segr Resistant,N-Channel Power MOSFETs
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| File Size |
54.83K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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