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rg-59 u Datasheet PDF File

For rg-59 u Found Datasheets File :: 1941 Search Time::8.782ms
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				MOTOROLA INC MOTOROLA[Motorola, Inc]
Part No.	MGW20N60D
OCR Text	...60 Vdc, VGE = 15 Vdc, TJ = 25C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient S...59 61 150 212 0.60 0.75 1.35 51 77 184 392 1.20 1.50 2.70 74 19 27 -- -- -- -- 0.85 -- -- -- -- -- -...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
File Size	245.88K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7401 IRF7402 IRF7401TR
OCR Text	... VDD = 10V --- ID = 4.1A ns --- RG = 6.0 --- RD = 2.4, See Fig. 10 D --- nH --- Between lead tip and center of die contact VGS = 0V ...59 ns TJ = 25C, IF = 4.1A --- 42 63 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.022ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
File Size	117.75K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF737LC
OCR Text	...VDD = 150V --- ID = 6.1A ns --- RG = 12 --- RD = 24, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact 430 --- VGS = 0V 120 --- pF VDS = 25V 9.2 --- = 1.0MHz, See Fig. 5 Source-Drain R...
Description	300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET?? Power MOSFET
File Size	144.10K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7416 IRFB7416 IRF7416TR
OCR Text	...15V 49 --- ID = -5.6A ns 59 --- RG = 6.2 60 --- RD = 2.7, See Fig. 10 1700 --- VGS = 0V 890 --- pF VDS = -25V 410 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Sourc...
Description	Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm) Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	112.47K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP27N60K
OCR Text	... VDD = 300V --- ID = 27A ns --- RG = 4.3 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VD...59 ) 4 .30 (.1 70 ) 3 .70 (.1 45 ) LE AD A S SIG N ME NTS 1 2 3 4 G ATE DR A IN SO uR C E DR A IN ...
Description	Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rdson）典\u003d 180mohm，身份证\u003d 27A条） Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)
File Size	89.84K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LL APT5010LLL
OCR Text	...AN OR DV NF A I VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 46 184 1.3 ...59 (.102) 3.00 (.118) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.78K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT5010B2VFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ...59 (.102) 050-5624 Rev A 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	64.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technolo...
Part No.	APT5010B2VR APT5010B2VRG
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns...59 (.102) 050-5611 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. New T-MAX?Package (Clip-mounted TO-247 Package)
File Size	61.66K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 46 184 1.3 5 250 500 ...59 (.102) 3.00 (.118) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	54.02K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT 5375 1040 185 145 34 76 12 15 28 4.6 6500 1460 280 220 41 120 24 30 42 10.0...59 (.102) 3.00 (.118) Gate Drain Source 050-5900 Rev A 8-2000 2.21 (.087) 2.59 (.102) 5....
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

For rg-59 u Found Datasheets File :: 1941 Search Time::8.782ms
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