rg-210 u pdf Datasheet P3 Full Text Search --- IC-ON-LINE


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rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1417 Search Time::1.282ms
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				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VFR
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 77 308 1.3 5 300 600 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 Tj ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.66K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VR
OCR Text	...A FO AD IN 210 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C 77 308 1.3 (VGS = 0V, IS = -ID[Cont.]) 680 Reverse Recovery Charge (IS = -ID[Cont.], dl ...
Description	POWER MOS V 500V 77A 0.060 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	33.79K / 2 Page	View it Online	Download Datasheet

				Harris, Corp. Fairchild Semiconductor HARRIS[Harris Corporation]
Part No.	HGTG12N60C3D
OCR Text	...GE = 20V TJ = 150oC, VGE = 15V, RG = 25, L = 100H Gate-Emitter Leakage Current Switching SOA IGES SSOA VCE(PK) = 480V VCE(PK) = 600...210 380 900 1.7 34 30 - 55 71 400 275 2.0 42 37 1.2 1.5 V nC nC ns ns ns ns J J V ns ns oC/W ...
Description	36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的，的ufs系列N沟道IGBT的与反平Hyperfast二极 24A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	102.34K / 7 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTE125N20E MTE125N20E_D ON2529
OCR Text	... Vdc, IL = 125 Apk, L = 0.05mH, RG = 25 ) RMS Isolation Voltage Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Amb...210 TJ = 25C I D , DRAIN CuRRENT (AMPS) VGS = 10 V 9V 140 6V 8V 7V I D , DRAIN CuRRENT (AMPS) 120 16...
Description	From old datasheet system TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM
File Size	227.99K / 8 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
Part No.	MAX3805 MAX3805ETE
OCR Text	...ion line, or up to 24ft (8m) on RG-188A/u type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The MAX3805 adaptive equalizer reduce...210 - 1, 100 zeros, PRBS 210 - 1. Note 5: VIN = 400mVP-P to 1200mVP-P, input path is 0 to 30in, 6-mi...
Description	10.7Gbps Adaptive Receive Equalizer
File Size	297.96K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPu165MF
OCR Text	... 39A, VCC = 480V 540 VGE = 15V, RG = 5.0 360 Energy losses include "tail" and -- diode reverse recovery -- mJ See Fig. 9, 10, 11, 18 5.4 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 39A, VCC = 480V -- VGE = 15V, RG = 5.0 -- Energy losses...
Description	IGBT SIP MODuLE Fast IGBT
File Size	398.34K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG11N120CND
OCR Text	... 2. VCE(PK) = 840V, TJ = 125oC, RG = 10 . Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES...210 360 1.9 2.1 2.6 60 32 MAX 24 16 280 400 2.5 2.5 3.2 70 40 0.42 1.25 uNITS ns ns ns ns mJ mJ V ns...
Description	43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	108.55K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text	... 3. VCE(PK) = 840V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...210 140 0.4 1.1 1.0 25 15 250 200 0.5 2.3 1.4 0.42 uNITS ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ ...
Description	1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
File Size	175.79K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...210 380 900 1.7 55 71 400 275 2.1 V nC nC ns ns ns ns J J V Current Turn-On Delay Time Curr...
Description	24A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB 24A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
File Size	151.95K / 8 Page	View it Online	Download Datasheet

For rg-210 u Found Datasheets File :: 1417 Search Time::1.282ms
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