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rg-195 u Datasheet PDF File

For rg-195 u Found Datasheets File :: 657 Search Time::1.156ms
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				EIC discrete Semiconductors NEC[NEC]
Part No.	2SK3408
OCR Text	... 20 V ID = 0.5 A VGS(on) = 10 V RG = 10 VDS = 30.4 V ID = 1.0 A VGS = 10 V IF = 1.0 A, VGS = 0 V IF = 1.0 A, VGS = 0 V di/dt = 100 A / s 1.5 1 2.0 2.0 155 185 195 230 50 30 18 14 115 38 4.0 1.0 1.0 0.81 25 16 195 250 260 MIN. TYP. MAX. 10 ...
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	60.29K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5032CVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 2650 360 150 110 19 45 10 11 43 7 3180 500 225 175 30 70 20 22 70 14 ns nC ...195) Drain Source Gate 3.81 (.150) BSC 6.60 (.260) 6.32 (.249) 050-5832 Rev A 1.14 (.045) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 14A 0.320 Ohm
File Size	60.85K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT pF 2600 270 135 130 13 66 12 11 45 8 3120 380 200 195 20 100 24 22 70 16 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay T...
Description	POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 2600 270 135 130 13 66 12 11 45 8 3120 380 200 195 20 100 24 22 70 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	BZA408B BZA408B_2
OCR Text	... ESD TESTER RZ CZ 450 RG 223/u 50 coax 10x ATTENuATOR note 1 DIGITIZING OSCILLOSCOPE 50 IEC1000-4-2 network CZ = 150 pF...195-215 Main Road Martindale, 2092 JOHANNESBuRG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 59...
Description	Quadruple bidirectional ESD transient voltage suppressor From old datasheet system
File Size	74.53K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA65N20
OCR Text	..., 5) VDD = 100 V, ID = 65 A, RG = 25 (Note 4, 5) -------- 120 640 340 275 170 45 75 250 770 690 560 200 --- ns ns ns ns nC ...195 1.4 65 260 1.5 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maxi...
Description	200V N-Channel MOSFET
File Size	621.78K / 8 Page	View it Online	Download Datasheet

				Harris, Corp. Fairchild Semiconductor HARRIS[Harris Corporation]
Part No.	HGTG12N60C3D
OCR Text	...GE = 20V TJ = 150oC, VGE = 15V, RG = 25, L = 100H Gate-Emitter Leakage Current Switching SOA IGES SSOA VCE(PK) = 480V VCE(PK) = 600V 80 24 - 100 - nA A A Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) ...
Description	36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的，的ufs系列N沟道IGBT的与反平Hyperfast二极 24A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	102.34K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFP250 IRFP250B IRFP250BFP001
OCR Text	..., 5) VDD = 100 V, ID = 32 A, RG = 25 (Note 4, 5) -------- 30 240 295 195 95 13 43 70 490 600 400 123 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous ...
Description	200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A 200V N-Channel MOSFET
File Size	667.05K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW740 IRFW740B IRFI740B IRFW740BTM IRFW740BTMNL
OCR Text	..., 5) VDD = 200 V, ID = 10 A, RG = 25 (Note 4, 5) -------- 20 80 125 85 41 7 17 50 170 260 180 53 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drai...
Description	400V N-Channel B-FET / Substitute of IRFW740A 400V N-Channel MOSFET
File Size	676.22K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG11N120CND
OCR Text	... 2. VCE(PK) = 840V, TJ = 125oC, RG = 10 . Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150o...
Description	43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	108.55K / 8 Page	View it Online	Download Datasheet

For rg-195 u Found Datasheets File :: 657 Search Time::1.156ms
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