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rg-187 u Datasheet PDF File

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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8015 APT8015JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 14715 1470 794 690 75 275 22 20 97 15 17650 2050 1190 1035 110 410 44 40 145...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	POWER MOS V 800V 44A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	75.34K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020JFLL APT6017JFLL
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT pF 5320 1020 168 196 26 111 19 17 57 11 ns nC Gate-Source Charge Gate-Drai...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.28K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8020JLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 33 142 1.3 ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.75K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024JFLL
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT pF 4420 850 140 163 21 92 17 16 51 10 ns nC Gate-Source Charge Gate-Drain ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.21K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 29 116 1.3 ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.72K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8028JVR APT5010JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 7700 730 350 380 38 165 13 10 51 8 9240 1020 425 570 55 245 26 20 75 16 ns ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	POWER MOS V 800V 28A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 n...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns n...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	67.66K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BuK7608-55
OCR Text	... = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = 25C unles...
Description	TrenchMOS transistor Standard level FET
File Size	65.96K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BuK9608-55
OCR Text	...D = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad REVERSE DIODE LIMITING VALuES AND CHARACTERISTICS Tj = 25C unless otherwise ...
Description	TrenchMOS transistor Logic level FET
File Size	68.11K / 8 Page	View it Online	Download Datasheet

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