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  rg-174 u Datasheet PDF File

For rg-174 u Found Datasheets File :: 366    Search Time::2.36ms    
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    IXKN75N60 IXKN75N60C

IXYS[IXYS Corporation]
Part No. IXKN75N60 IXKN75N60C
OCR Text ...= 10 V; VDS = 380 V; ID = 50 A; RG = 1 (reverse conduction) IF = 37.5 A; VGS = 0 V Applications 0.22 K/W Switched mode po...174 0.191 0.987 0.004 0.180 21.08 M4 screws (4x) supplied (c) 2001 IXYS All rights reserved ...
Description CoolMOS Power MOSFET

File Size 67.87K  /  3 Page

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    SMCTTA32N14A10

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. SMCTTA32N14A10
OCR Text ...25oC, VGK= -5V to +5V VAK=800V, RG=4.7 LS= 7nH (See Figures 4,5 & 6) 0.2uF Capacitor Discharge TJ=150oC, VGK= -5V to +5V VAK=1200V, RG=4.7 LS= 7nH (See Figures 4,5 & 6) Anode (bottom) side cooled (Note 1.) Cathode-Gate (top) side cooled (No...
Description Advanced Pulse Power Device N-MOS VCS, ThinPakTM

File Size 670.51K  /  5 Page

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXEN60N120 IXEN60N120D1
OCR Text ...t TC = 25C TC = 90C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 22 ; TVJ = 125C ...174 0.191 0.987 0.004 0.180 21.08 miniBLOC, SOT-227 B Symbol VF IF IRM t rr t rr RthJC Cond...
Description NPT IGBT 100 A, 1200 V, N-CHANNEL IGBT

File Size 35.22K  /  2 Page

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    IXFN180N10

ETC[ETC]
IXYS[IXYS Corporation]
Part No. IXFN180N10
OCR Text ...t 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 100 100 20 30 180 100 720 180 60 3 5 600 -55 ... +150 150 -55 ... +150 3...174 0.191 0.987 0.004 miniBLOC, SOT-227 B Source-Drain Diode (TJ = 25C, unless otherwise speci...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFET Single MOSFET Die

File Size 83.10K  /  4 Page

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    TGF4250 TGF4250-EEU

TriQuint Semiconductor, Inc.
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
Part No. TGF4250 TGF4250-EEu
OCR Text ...ODEL R DG LG G RI R GS C GS R1 RG C DG V CCS RD LD D C DS R2 R DS RS LS VDS = 8.0 V and 30% I DSS at T = 25C FET...174.17 -174.73 -175.23 -175.69 -176.12 -176.51 -176.88 -177.23 -177.57 9.887 5.725 3.935 2.978 2....
Description 4.8 mm Discrete HFET 四点八毫米离散异质结场效应晶体管

File Size 179.42K  /  7 Page

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    IXFN150N10 IXFK100N10 IXFK150N10

IXYS[IXYS Corporation]
Part No. IXFN150N10 IXFK100N10 IXFK150N10
OCR Text ... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings IXFK IXFN 100 100 20 30 100 76 560 75 30 5 500 100 100 20 30 150 560 7...174 0.191 0.987 0.004 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by ...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 114.74K  /  4 Page

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    IXYS[IXYS Corporation]
Part No. IXFN150N15
OCR Text ... 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C Maximum Ratings 150 150 20 30 150 100 600 150 60 3 5 600 -55 ... +150 150 -55 ... +150 ...174 0.191 0.987 0.004 miniBLOC, SOT-227 B Source-Drain Diode (TJ = 25C, unless otherwise speci...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 69.31K  /  2 Page

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    MGW20N120

MOTOROLA[Motorola, Inc]
Part No. MGW20N120
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...174 1.39 - 55 to 150 10 0.7 35 260 10 lbfSin (1.13 NSm) unit Vdc Vdc Vdc Adc Apk Watts W/C C m...
Description Insulated Gate Bipolar Transistor

File Size 231.07K  /  6 Page

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    MGY20N120D

MOTOROLA[Motorola, Inc]
Part No. MGY20N120D
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...174 1.39 - 55 to 150 10 0.7 1.1 35 260 10 lbfSin (1.13 NSm) unit Vdc Vdc Vdc Adc Apk Watts W/C C ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 254.56K  /  6 Page

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    IXYS[IXYS Corporation]
Part No. IXFN80N50 IXFN75N50
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 64 6 5 700 -55 ... +150 150 -55 ... +150 Either Source terminal of miniBLOC can be us...174 0.191 0.987 0.004 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V...
Description (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET

File Size 125.53K  /  4 Page

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For rg-174 u Found Datasheets File :: 366    Search Time::2.36ms    
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