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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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| Part No. |
AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM28F020-120EI AM28F020-120ECB AM28F020-120EIB AM28F020-120EEB AM28F020-200FI AM28F020-120FEB AM28F020-200FCB AM28F020-200FIB AM28F020-120FCB AM28F020-120FI AM28F020-200FEB AM28F020-150ECB AM28F020-70ECB AM28F020-70FEB AM28F020-90FE AM28F020-150FC AM28F020-150FCB AM28F020-70FCB AM28F020-90FC AM28F020-90EC AM28F020-90FEB AM28F020-150FEB AM28F020-70EI AM28F020-70EE AM28F020-70EIB AM28F020-150EIB AM28F020-90EIB AM28F020-200EIB AM28F020-120PCB AM28F020-120PIB AM28F020-120JCB AM28F020-90EE AM28F020-90PCB AM28F020-90FCB AM28F020-90PE AM28F020-200JIB AM28F020-200JCB AM28F020-70PCB AM28F020-200PIB AM28F020-200JEB AM28F020-150PI AM28F020-70FIB AM28F020-90PI AM28F020-90PIB AM28F020-150JE AM28F020-70PEB
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| OCR Text |
...igned to optimize the erase and pro- gramming mechanisms. in addition, the combination of advanced tunnel oxide processing and low internal ...electron injection. product selector guide block diagram family part number am28f020 speed options (... |
| Description |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
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| File Size |
276.20K /
35 Page |
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Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC SPANSION LLC
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| Part No. |
AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90FEB AM28F512-90EEB AM28F512-120FC AM28F512-90JEB AM28F512-120PEB AM28F512-90PEB AM28F512-120FCB AM28F512-120FE AM28F512-120FI AM28F512-120JC AM28F512-120JCB AM28F512-120JI AM28F512-200JC AM28F512-70FI AM28F512-70FC AM28F512-70JC AM28F512-70JCB AM28F512-70JE AM28F512-70JEB AM28F512-70JI AM28F512-70FCB AM28F512-70FE AM28F512-70ECB AM28F512-70FEB AM28F512-200FCB AM28F512-90FCB AM28F512-150FC AM28F512-150FCB AM28F512-70EIB AM28F512-70PE AM28F512-70FIB AM28F512-70EEB AM28F512-200FIB AM28F512-150PEB AM28F512-150PCB AM28F512-200ECB AM28F512-200EEB AM28F512-150JIB AM28F512-150EEB AM28F512-150JEB AM28F512-200FEB AM28F512-200JEB AM28F512-200PEB AM28F512-70PEB AM28F512-150PI AM28F512-70PC AM28F512-70PI AM28F512-200PI AM28F512-120PI AM28F512-90EI AM28F512-120JIB AM28F512-90JCB AM28F512-90JI AM28F512-90PCB AM28F512-150FIB AM28F512-120FIB SPANSIONLLC-AM28F512-90EE
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| OCR Text |
... in-system or in standard eprom pro- grammers. the am28f512 is erased when shipped from the factory. the standard am28f512 offers access tim...electron injection. block diagram product selector guide family part number am28f512 speed options (... |
| Description |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V,CMOS 512K位整体擦除闪速存储器) IC-512K FLASH MEMORY 4-bit magnitude comparators 16-PDIP 0 to 70 Quad 2-input exclusive-OR gates 14-PDIP 0 to 70 Decade Counter 14-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70 Quad bistable latches 16-SOIC 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70 4-bit magnitude comparators 16-SOIC 0 to 70 Quad bistable latches 16-PDIP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70 8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 ER 14C 14#16 PIN RECP LINE 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
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| File Size |
273.54K /
35 Page |
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it Online |
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Advanced Micro Devices, Inc. SPANSION LLC
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| Part No. |
AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM29F016-75FCB AM29F016-75EC AM29F016-75SCB AM29F016-120SCB AM29F016-90EI AM29F016-150EC AM29F016-150EIB AM29F016-150FC AM29F016-120FCB AM29F016-90FC AM29F016-120ECB AM29F016-90EC ADVANCEDMICRODEVICESINC-AM29F016-150EI
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| OCR Text |
... is programmed by executing the pro- gram command sequence. this will invoke the embed-
2 am29f016 ded program algorithm which is an inter...electron injection. flexible sector-erase architecture n thirty two 64 kbyte sectors n eight sector... |
| Description |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail 16-Megabit097152*8-bit)CMOS 5.0 Volt-only,sector Erase Flash memory LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1 LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位)CMOS 5.0伏只,扇区擦除闪 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
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| File Size |
224.41K /
36 Page |
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it Online |
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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| Part No. |
AM29LV641DH101RZI AM29LV640DU101RZI AM29LV640DH101RZI AM29LV640DH101RZIN AM29LV640DU101RZIN AM29LV641DL101RZI AM29LV640DL101RZI AM29LV641DH101RWHIN AM29LV641DH120RWHIN AM29LV641DH121RWHIN AM29LV641DH90RWHIN AM29LV641DL101RWHIN AM29LV641DL120RWHIN AM29LV641DL121RWHIN AM29LV641DL90RWHIN AM29LV641DU101RWHI AM29LV640DH101RPCE AM29LV640DH101RPCEN AM29LV640DH101RPCI AM29LV640DH101RPCIN AM29LV641DH101RPCE AM29LV641DH101RPCEN AM29LV640DH121RWHE AM29LV640DH121RWHEN AM29LV640DH120RZEN AM29LV640DH121RZEN AM29LV640DH90RZI AM29LV640DH120RZI AM29LV640DH101RZEN AM29LV640DH121RZIN AM29LV641DL120RZE AM29LV641DH90RZE AM29LV641DH90RZEN AM29LV640DL101RZE AM29LV640DL101RZEN AM29LV641DH120RZE AM29LV640DU90RZE AM29LV640DH90RZE AM29LV640DH90RZEN AM29LV640DL120RZE AM29LV640DL90RZE AM29LV640DL90RZEN AM29LV640DU120RZE AM29LV640DH120RZIN AM29LV640DH101REE AM29LV640DH101REEN AM29LV640DH101REI AM29LV640DH101REIN AM29LV640DH101RFE AM29LV640DH101RFEN AM29LV640DH101RFI AM29LV640DH101RFIN AM29LV640DH101RWHE AM29LV640DH101RWHEN AM29LV640DH101RWHI AM29LV640DH101RWHIN AM29LV640DU90RZIN AM29LV641DU90RWHEN AM29LV640DU90RZEN AM29LV641DU121RZIN AM29LV640DL121RZIN AM29LV640DU121RZI AM29LV641DH101RZE AM29LV641DH101REEN AM29
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| OCR Text |
...5. the device is designed to be pro- grammed in-system with the standard system 3.0 volt v cc supply. a 12.0 volt v pp is not required for...electron injection.
september 20, 2002 am29lv640d/am29lv641d 3 table of contents product selecto... |
| Description |
RF Coaxial Connector Adapter; Convert From:TNC Plug; Convert To:N Jack RoHS Compliant: Yes RF Coaxial Connector Adapter; Convert From:TNC Plug; Convert To:BNC Jack RoHS Compliant: Yes 8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor CONTROLLERS,TYPE 4950 7-DAY PROGRAMMABLE CONTROLLERS,CONTROLLERS,PHOTOMOS RELAY,CONTROLLERS,4950 SERIES 7-DAY PROGRAMMABLE CONTROLLERS ,ARTISAN CONTROLS RoHS Compliant: Yes 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 64兆位个M x 16位).0伏的CMOS只均匀部门闪光控制记忆与VersatileI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 4M X 16 FLASH 3V PROM, 120 ns, PDSO56 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 64兆位个M x 16位).0伏的CMOS只均匀部门闪光控制记忆VersatileI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control 4M X 16 FLASH 3V PROM, 120 ns, PBGA63
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| File Size |
1,039.62K /
57 Page |
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it Online |
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SPANSION LLC
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| Part No. |
AM29LV256MH123FF
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| OCR Text |
...dresses and data needed for the pro- gramming and erase operations. the sector erase architecture allows memory sec- tors to be erased and...electron injection. related documents for a comprehensive information on mirrorbit prod- ucts, inclu... |
| Description |
16M X 16 FLASH 3V PROM, 120 ns, PDSO56
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| File Size |
538.71K /
68 Page |
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it Online |
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YEONHO Electronics Co., Ltd.
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| Part No. |
AM29F017B-90E4I AM29F017B-75FC AM29F017B-75EI AM29F017B-75FI AM29F017B-150E4I AM29F017B-75E4I AM29F017B-75EC AM29F017B-75E4C AM29F017B-150E4C AM29F017B-120E4E AM29F017B-120E4C
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| OCR Text |
... volt v pp is not required for pro- gram or erase operations. the device can also be pro- grammed in standard eprom programmers. this devic...electron injection.
am29f017b 3 product selector guide note: see the ac characteristics section f... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24N with Standard Packaging 250V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR12N25D with Lead Free Packaging 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ44NS with Lead Free Packaging 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7832 with Lead Free Packaging x8 Flash EEPROM x8闪存EEPROM 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3709ZS with Lead Free Packaging
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| File Size |
661.81K /
39 Page |
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it Online |
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Macronix International Co., Ltd. http://
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| Part No. |
MX26LV800ABXBC-55G MX26LV800ABXBC-70G MX26LV800ATXBC-70G MX26LV800ATXEC-70 MX26LV800ABXEC-55G MX26LV800ABTC-55G
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| OCR Text |
...tary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamperes on address and data pin from -1v to vcc + 1v. mac...electron injection. during a program cycle, the state-machine will control the program sequences and... |
| Description |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
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| File Size |
566.17K /
50 Page |
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it Online |
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Price and Availability
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