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Laird Technologies, Inc.
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| Part No. |
BR1458S/D
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| OCR Text |
... gate processing gate oxide thickness 150? gate terminal phosphorous doped polysilicon (pocl) n+ source drain dopan...nitride over psg oxide electrical characteristics field threshold voltage >12v p... |
| Description |
Reliability Report for the LCX Product Family 可靠性报告的回旋支产品系
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| File Size |
168.97K /
16 Page |
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IMP[IMP, Inc]
IMP Inc
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| Part No. |
C1227
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| OCR Text |
...oltage VTFP(P) Capacitance Gate Oxide Metal-1 to Poly1 Metal-2 to Metal-1 Vertical NPN Transistor Beta Early Voltage Cut-Off Frequency Symbo...nitride
Layout Rules
Min Channel Width Min Spacing, Active Region, 5V Poly1 Width/Space Poly2 Wi... |
| Description |
ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles 30V的高压BiCMOS工艺1.2毫米双金双聚
From old datasheet system
HV BiCMOS 1.2mm 30V Double Metal - Double Poly
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| File Size |
26.81K /
2 Page |
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California Eastern Laboratories
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| Part No. |
GET-30704
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| OCR Text |
...(vapour phased epitaxy). (2) oxide isolation to reduce parasitic capacitance. (3) a shallow and higher impurity doped base b...nitride passivation film. (6) a ti-pt-au electrode structure.
3. .qualification tests (1) ... |
| Description |
Qualification Test Results on Si MMIC
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| File Size |
8,711.33K /
20 Page |
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N.A.
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| Part No. |
SC33303440 SC00680912 SC01000912
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| OCR Text |
oxide-nitride dielectric Low loss -- typically 0.04 dB in a 50 system Operation through 26 GHz Wide temperature operation
Description
Skyworks MIS Chip Capacitors are available in a wide range of sizes and capacitance values. They are ... |
| Description |
MIS Chip Capacitors
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| File Size |
43.21K /
3 Page |
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Price and Availability
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