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ns-pulse Datasheet PDF File

For ns-pulse Found Datasheets File :: 134793 Search Time::3.265ms
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				ON Semiconductor
Part No.	MMBT8099LT1G-16
OCR Text	...00 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn-off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t ...pulse train shown read time at t 1 (see an469) t 1 t 2 duty cycle, d = t 1 /t 2 p (pk) d = 0.5 0.2 0...
Description	Amplifier Transistor
File Size	113.10K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXYH75N65C3
OCR Text	...0 nc t d(on) 26 ns t ri 65 ns e on 2.00 mj t d(off) 93 ns t fi 60 n...pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may...
Description	International Standard Package
File Size	229.00K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	ESD8551
OCR Text	...ions: z 0 = 50 , t p = 100 ns, t r = 4 ns, averaging window; t 1 = 30 ns to t 2 = 60 ns. esd8551, szesd8551 www. onsemi.com 3 typi...pulse (tlp) measurement transmission line pulse (tlp) provides current versus voltage (i?v) curves i...
Description	ESD Protection Diodes
File Size	282.72K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVMFS4C01NT3G
OCR Text	..., i d = 15 a, r g = 3.0 29 ns rise time t r 68 turn?off delay time t d(off) 53 fall time t f 36 drain?source diode characteristics for...pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independen...
Description	Power MOSFET
File Size	78.72K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMFS4C01NT3G NTMFS4C01NT1G
OCR Text	..., i d = 15 a, r g = 3.0 29 ns rise time t r 68 turn ? off delay time t d(off) 53 fall time t f 36 drain ? source diode characteristics ...pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independen...
Description	Single N-Channel Field Effect Transistor
File Size	119.39K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMFS4851NT3G
OCR Text	...drain to source dv/dt dv/dt 6 v/ns single pulse drain ? to ? source avalanche energy (v dd = 50 v, v gs = 10 v, i l = 27 a pk , l = 0.3 mh, r g = 25 eas 109 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 26...
Description	Power MOSFET 30V 66A Single N-Channel, SO-8FL
File Size	112.50K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTMFS4841NT3G
OCR Text	...drain to source dv/dt dv/dt 6 v/ns single pulse drain ? to ? source avalanche energy (v dd = 24 v, v gs = 10 v, i l = 19 a pk , l = 1.0 mh, r g = 25 eas 180 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 26...
Description	Power MOSFET 30V 57A Single N-Channel, SO-8FL
File Size	121.09K / 7 Page	View it Online	Download Datasheet

For ns-pulse Found Datasheets File :: 134793 Search Time::3.265ms
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