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Alpha & Omega Semiconductor
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| Part No. |
AOTF12T50P
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| OCR Text |
...2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =10v i d =6a v gs =10v 0 5 10 15 20 25 0 5 10 15 20 25 30 i d (a) v ds (volts) figure 1: on-region characterist... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
411.08K /
6 Page |
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ST Microelectronics
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| Part No. |
STU2N80K5
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| OCR Text |
...4993 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. normalized v ds vs temperature figure 17. source-drain diode forward char... |
| Description |
N-channel 800 V, 3.5 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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| File Size |
1,597.49K /
23 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF4N60
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| OCR Text |
...2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. ju... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
359.99K /
6 Page |
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Nexperia
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| Part No. |
PMCM4401VNE
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| OCR Text |
...3 40 80 120 p der (%) 0 fig. 2. normalized total power dissipation as a function of junction temperature t j (c) - 75 175 125 25 75 - 25 017aaa124 40 80 120 i der (%) 0 fig. 3. normalized continuous drain current as a function of junction t... |
| Description |
12V, N-channel Trench MOSFET
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| File Size |
320.46K /
15 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOL1240
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| OCR Text |
... 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 120 0 1 ... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
276.89K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOW4S60
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| OCR Text |
...stance vs. junction temperature normalized on-resistance v gs =10v i d =2a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 2 4 6 8 0 5 10 15 20 v ds (volts) figur... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
296.02K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOW482
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| OCR Text |
.... junction temperature (note e) normalized on-resistance v gs =7v i d =20a v gs =10v i d =20a 4 6 8 10 12 14 16 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =7... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
262.70K /
7 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF13N50
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| OCR Text |
...stance vs. junction temperature normalized on-resistance v gs =10v i d =6.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temperature bv dss (normalized) rev3: jul 2011 www.aosmd.com page... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
282.32K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOK30B135W1
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| OCR Text |
....0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 21 : normalized maximum transient thermal impedance fo r igbt d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.44 c/w in descending order d... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
533.88K /
8 Page |
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it Online |
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