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  mnos Datasheet PDF File

For mnos Found Datasheets File :: 169    Search Time::2.188ms    
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Part No. HN58C65FP-25
OCR Text ...reliability, employing advanced mnos memory technology and cmos process and circuitry technology. it also has a 32-byte page programming function to make its erase and write operations faster. features ? single 5 v supply ? on chip latches...
Description 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM

File Size 151.07K  /  16 Page

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    HN58V66AFP-10 HN58V65AFP-10 HN58V65AP-10 HN58V65AT-10 HN58V66AP-10

Hitachi,Ltd.
Hitachi Semiconductor
Part No. HN58V66AFP-10 HN58V65AFP-10 HN58V65AP-10 HN58V65AT-10 HN58V66AP-10
OCR Text ...lisbility by employing advanced mnos memory technology and cmos process and circuitry technology. they also have a 64-byte page programming function to make their write operations faster. features single supply: 2.7 to 5.5 v access tim...
Description 64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A)
64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) 64亩的EEPROM KWord的8位)就绪/忙功能水库功能(HN58V66A

File Size 123.76K  /  27 Page

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    HITACHI
Part No. HN58C1001P-15
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster. Features * Single supply: 5.0 V 10% * Access time: ...
Description 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

File Size 112.22K  /  23 Page

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    HN58V1001T-25E HN58V1001FP-25 HN58V1001FP-25E

Renesas Electronics Corporation
Part No. HN58V1001T-25E HN58V1001FP-25 HN58V1001FP-25E
OCR Text ...iability by employing advanced mnos memory technology and cmos process and circuitry technology. it also has a 128-byte page programming function to make the write operations faster. features ? single 3 v supply: 2.7 v to 5.5 v ? a...
Description 1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function

File Size 255.87K  /  24 Page

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    Hitachi,Ltd.
Part No. HN58V65AI HN58V66AI
OCR Text ...liability by employing advanced mnos memory technology and cmos process and circuitry technology. they also have a 64-byte page programming function to make their write operations faster. features single supply: 2.7 to 5.5 v access tim...
Description 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k×8)

File Size 210.65K  /  30 Page

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For mnos Found Datasheets File :: 169    Search Time::2.188ms    
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