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				Pan Jit International Inc.
Part No.	SBT1545LSS
OCR Text	...arameter symbol test conditions min. typ. max. unit breakdown voltage v br i r =0.5ma 45 - - v instantaneous forward voltage v f i f =5a i f =10a i f =15a t j =25 o c - - - 0.35 0.39 0.42 - - 0.46 v i f =5a i f =10a t j =125 o c - - 0...
Description	Ultra low forward voltage drop, low power losses
File Size	73.18K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMZ950UPE
OCR Text	...ata symbol parameter conditions min typ max unit v ds drain-source voltage - - -20 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -500 ma static characteristics r dson drain-source on...
Description	20 V, P-channel Trench MOSFET
File Size	229.35K / 15 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTA55N02N3
OCR Text	...ss otherwise noted) symbol min. typ. max. unit test conditions static bv dss 20 - - v v gs =0, i d =250 a ? bv dss / ? tj - 0.1 - v/ c reference to 25c, i d =1ma v gs(th) 0.35 0.5 0.7 v v ds =v gs , i d =250 a ...
Description	20V N-CHANNEL Enhancement Mode MOSFET
File Size	261.35K / 8 Page	View it Online	Download Datasheet

				TDK Electronics
Part No.	MLF2012
OCR Text	... l l, q measuring conditions q min. self-resonant frequency (mhz) min. dc resistance ( ) max. rated current (ma) max. part no. (h) tolerance frequency (mhz) current (ma) 0.10 10% 25 1.0 10 450 0.51 180 mlf1005vr10kt 0.12 10% 25 1.0...
Description	Inductors for Standard Circuits Multilayer Ferrite
File Size	329.84K / 24 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	LA42031-E
OCR Text	... parameter symbol conditions min typ max unit standby current ist amplifier off 0 10 a quiescent current i cco rg = 0, r l = open 25 45 90 ma p o 1 thd = 10% 2 3 w output power p o 2 v cc = 11v, thd = 10% 5 w tota...
Description	5W Monaural Power Amplifier
File Size	79.42K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	AUIRFI4905
OCR Text	... specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.049 ??? v/c ref...
Description	Advanced Planar Technology
File Size	300.37K / 9 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMI...
Part No.	5082-2811T25 5082-2800T25 1N5711
OCR Text	...16) ? 0.36 (.014) 25.4 (1.00) ? min. 25.4 (1.00) ? min. 1.93 (.076) ? 1.73 (.068) cathode dimensions in millimeters and (inches). 4.32 (.170) ? 3.81 (.150) 2 package characteristics outline 15 lead material .............................
Description	SILICON, MIXER DIODE Pico Second Switching Speed
File Size	217.47K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPN6R303NC
OCR Text	... 10 a v gs = 10 v, i d = 10 a min 30 15 1.3 typ. 6.9 5.2 max 0.1 10 2.3 8.4 6.3 unit a v m ? note 5: if a reverse bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain- source breakd...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	234.58K / 9 Page	View it Online	Download Datasheet

				New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
Part No.	STW8NA80 STH8NA80FI
OCR Text	... max rating tc=100c vgs = 30 v min. 800 typ. max. 50 500 100 unit v ha ua na on(*) symbol vcs(ih) rds(on) id(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs id = 250 ^...
Description	N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
File Size	130.14K / 3 Page	View it Online	Download Datasheet

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