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  max.collector Datasheet PDF File

For max.collector Found Datasheets File :: 66700    Search Time::1.891ms    
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    TOSHIBA
Part No. TPC6D03
OCR Text ...diode) characteristics symbol max unit thermal resistance, junction to ambient (single-device operation) r th (j-a) (note 1) 312 c/w ...collector cut-off current i cbo v cb 20 v, i e 0 100 na emitter cut-off c...
Description Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications

File Size 155.17K  /  7 Page

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    TOSHIBA
Part No. TLP180
OCR Text ...characteristic symbol min. typ. max. unit supply voltage v cc D 5 48 v forward current i f(rms) D 16 20 ma collector current ic D 1 10 ma operating temperature t opr 25 D 85 c tlp180 2002-09-25 3 electrical chara...
Description 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
Photocoupler GaAs Ired & Photo .Transistor

File Size 144.26K  /  8 Page

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    ST Microelectronics
Part No. STI50DE100
OCR Text ...ge temperature -40 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit r thj-case thermal resistance junction...collector-source current (v bs = v gs = 0) v ce = 1000v 100 a i bs(os) base-source current (i c...
Description Hybrid Emitter Switched Bipolar Transistor ESBT

File Size 315.96K  /  11 Page

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    TCLT1104

Vishay Siliconix
Part No. TCLT1104
OCR Text ...TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are testing requiremen...Collector Dark Current, with Open Base (nA) IF - Forward Current (mA) 100 1000 VCE = 20 ...
Description Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package

File Size 143.21K  /  9 Page

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    BCPA42

SeCoS Halbleitertechnologie GmbH
Part No. BCPA42
OCR Text ... c parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 300 - - v i c = 100 a, i e =0 collector-emitter breakdown voltage v (br)ceo 300 - - v i c = 1 ma, ib=0 emitter-base breakdown ...
Description Epitaxial Planar Transistors

File Size 318.30K  /  2 Page

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    MJ1001

Inchange Semiconductor Company Limited
Part No. MJ1001
OCR Text ...ration Voltage: VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS *Designed for use as output devices in complementary general purpose amplifier...Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous ...
Description isc Silicon NPN Darlington Power Transistor

File Size 50.42K  /  2 Page

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    MIG150J6CSB1W

Mitsubishi Electric Semiconductor
Part No. MIG150J6CSB1W
OCR Text ...1.9 2.1 2.4 1.3 0.3 0.2 1.1 0.2 Max 1 10 2.3 2.8 2.2 2.1 s V V Unit mA Collector-emitter saturation voltage Forward voltage VCE (sat) VF ton tc (on) IF = 150 A, Tj = 25C Switching time trr toff tc (off) Note 1: Switchi...
Description High Power Switching Applications Motor Control Applications

File Size 207.87K  /  10 Page

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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ... I CBO I EBO hFE* 1 2SA1189 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE...Collector output capacitance Cob VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz Notes...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

File Size 23.47K  /  5 Page

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ... I CBO I EBO hFE* 1 2SA1191 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE...Collector output capacitance Noise figure Cob NF VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f ...
Description Silicon PNP Epitaxial

File Size 44.42K  /  10 Page

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...- Typ -- -- -- -- -- -- 0.3 0.9 Max -- -1.0 -1.0 -- -1.5 -2.0 -- -- V V s s I C = -250 mA I B1 = -IB2 = -0.5 mA Unit V A A Test conditions I...Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC c...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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For max.collector Found Datasheets File :: 66700    Search Time::1.891ms    
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