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For magn Found Datasheets File :: 326    Search Time::3.843ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2123 S452123
OCR Text ...meter (TYP.) S21 S12 Angle(deg) magn. Angle(deg) 148 0.031 123 129 0.032 99 109 0.035 76 0.035 90 53 73 0.034 31 56 0.034 17 39 0.035 -4 22 0.036 -22 5 0.037 -39 MITSUBISHI ELECTRIC S22 Angle(deg) 17 -2 -26 -51 -72 -92 -109 -123 -134 Mag...
Description 2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

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    MGFS45V2325 S452325

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2325 S452325
OCR Text ...meter (TYP.) S21 S12 Angle(deg) magn. Angle(deg) 88 0.036 47 71 0.037 29 54 0.038 10 0.040 38 -7 21 0.041 -26 3 0.041 -45 -14 0.043 -63 -34 0.044 -85 -54 0.043 -103 S22 Angle(deg) -10 -27 -45 -66 -86 -105 -125 -141 -158 magn. 0.36 0.39 0...
Description 2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

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    Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFC45V3642A C453642A
OCR Text ...0 3.80 3.90 4.00 4.10 4.20 4.30 magn. 0.51 0.55 0.56 0.54 0.47 0.37 0.27 0.26 0.40 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S-Parameter (TYP.) S11 Angle(deg) 165 125 93 67 40 5 -42 -117 -174 magn. 3.71 3.82 3.84 3.81 3.86 3.87 3.83 3.64 3.25 ...
Description 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应
From old datasheet system

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF4319 MGF4319G 431XG MGF4316 MGF4316G MGF431XG MGF431XGSERIES
OCR Text ... 8 9 10 11 12 13 14 15 16 17 18 magn. 0.990 0.967 0.925 0.874 0.831 0.783 0.743 0.706 0.682 0.670 0.639 0.617 0.591 0.571 0.565 0.560 0.533 0.484 S11 Angle -22.3 -40.6 -53.2 -70.9 -88.8 -105.7 -120.6 -132.1 -144.7 -159.1 -171.8 175.3 163.1 ...
Description Super Low Noise InGaAs HEMT
From old datasheet system

File Size 32.55K  /  3 Page

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    VSKLF200-12HJ

Vishay Siliconix
Part No. VSKLF200-12HJ
OCR Text .../diode and thyristor/thyristor (magn-a-pak power modules), 200 a vsk.f200..p series vishay semiconductors features ? fast turn-off thyristor ? fast recovery diode ? high surge capability ? electrically isolated baseplate ? 3500 v rms iso...
Description Fast Thyristor/Diode and Thyristor

File Size 1,326.28K  /  12 Page

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    IRKEL240-10S10 2199 IRKCL240-6S10 IRKDL240-6S10 IRKEL240-6S10 IRKJL240-6S10 IRKCL240-25S30 IRKDL240-25S30 IRKEL240-25S30

International Rectifier, Corp.
IR
Part No. IRKEL240-10S10 2199 IRKCL240-6S10 IRKDL240-6S10 IRKEL240-6S10 IRKJL240-6S10 IRKCL240-25S30 IRKDL240-25S30 IRKEL240-25S30 IRKJL240-25S30 IRKCL240-06S10 IRKCL240-10S10 IRKCL240-12S20 IRKCL240-14S20 IRKCL240-20S30 IRKDL240-14S20 IRKEL240-14S20 IRKJL240-14S20 IRKDL240-20S30 IRKDL240-10S10 IRKJL240-10S10 IRKEL240-12S20 IRKDL240-12S20 IRKJL240-12S20 IRKJL240-06S10 IRKDL240-06S10 IRKLC240-25S10 IRKEL240-06S10
OCR Text ... voltage UL E78996 approved magn-A-pak Power Modules 250A Description The IRK.L240 Series of magn-A-paks uses fast recovery power diodes in four basic configurations. The semiconductors are electrically isolated from the metal ba...
Description 600V Fast Recovery Diode in a magn-A-Pak package 600V的快恢复二极管在磁共 à - Pak封装
magn-A-pak Power Modules 磁共甲柏电源模块
IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C TSSOP-20 - OBSOLETE 快速恢复二极管
FAST RECOVERY DIODES 快速恢复二极管
IC LOGIC 3861 10-BIT FET BUS SWITCH -40 85C SOIC-24 - OBSOLETE 快速恢复二极管
From old datasheet system
2500V Fast Recovery Diode in a magn-A-Pak package
1000V Fast Recovery Diode in a magn-A-Pak package
1200V Fast Recovery Diode in a magn-A-Pak package
1400V Fast Recovery Diode in a magn-A-Pak package
2000V Fast Recovery Diode in a magn-A-Pak package
1600V Fast Recovery Diode in a magn-A-Pak package

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    MGF4931AM

Mitsubishi Electric Semiconductor
Part No. MGF4931AM
OCR Text ..., Ta=25C) S11 S21 Angle(deg.) magn. Angle(deg.) magn. S12 Angle(deg.) magn. S22 Angle(deg.) magn. 0.997 0.992 0.919 0.850 0.779 0.700 0.645 0.574 0.509 0.475 0.480 0.488 0.507 0.513 -14.6 -30.0 -44.7 -59.1 -74.9 -94.1 -10...
Description SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)

File Size 48.11K  /  5 Page

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    MGFC36V5867

Mitsubishi Electric Semiconductor
Part No. MGFC36V5867
OCR Text ...0 6.30 6.40 6.50 6.60 6.70 6.80 magn. 0.48 0.47 0.46 0.44 0.42 0.40 0.39 0.37 0.37 0.38 0.41 S11 Angle(deg) 155 136 116 98 79 60 39 17 -7 -33 -58 magn. 3.409 3.426 3.472 3.494 3.465 3.446 3.397 3.356 3.297 3.221 3.116 S21 Angle(deg) -29 -42...
Description 5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0910A 0910A
OCR Text ...0 2.50 2.60 2.70 2.80 2.90 3.00 magn. 0.962 0.961 0.960 0.959 0.958 0.957 0.956 0.955 0.954 0.952 0.950 0.948 0.946 0.944 0.941 0.938 0.934 0.930 0.926 0.922 0.918 0.913 0.907 0.902 0.895 0.885 S11 Angle(deg.) -155.5 -159.7 -163.4 -166.8 -1...
Description MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system

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For magn Found Datasheets File :: 326    Search Time::3.843ms    
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