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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ... hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) ...range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -20 -20 -7 -3.0 ...
Description SILICON PNP EPITAXIAL TYPE

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) ...range t = 10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -20 -20 -7 -2.5 ...
Description Silicon PNP Epitaxial Type

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ... time/tf: fall time is short) * Low collector-emitter saturation voltage VCE(sat) * Superior forward current transfer ratio hFE linearity * ...range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not ...
Description Silicon PNP epitaxial planar type

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ... time/tf: fall time is short) * Low collector-emitter saturation voltage VCE(sat) * Superior forward current transfer ratio hFE linearity * ...range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not ...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns (typ.) ...range t = 10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -20 -20 -7 -1....
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ... hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ.) ...range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -50 -50 -7 -1.0 ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text ...f : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -2A, IB = -0.2A) 3) Strong discharge power for indu...Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -60 -60 -6 -3 -6 500 2.0...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text ...f : Typ. : 20ns at IC = -2A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for i...Range of storage temperature 1 Pw=10ms 2 Each terminal mounted on a recommended land Pulsed T...
Description Power transistor

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    2SA2088

ROHM[Rohm]
Part No. 2SA2088
OCR Text ... Typ. : 60ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mV at IC = -100mA, IB = -10mA) 3) Strong discharge power for i...Range of storage temperature 1 Pw=10ms 2 Each terminal mounted on a recommended land Pulsed T...
Description Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2SA2091S 2SA2091STPQ
OCR Text ...f : Typ. : 30ns at IC = -1A) 2) Low saturation voltage, typically (Typ. : -200mV at IC = -0.5A, IB = -50mA) 3) Strong discharge power for in...Range of storage temperature Pw=100ms Pulsed Tj Tstg 1/3 2SA2091S Transistors !Elect...
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)

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