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  K8D6316UBM-PI08 Datasheet PDF File

For K8D6316UBM-PI08 Found Datasheets File :: 26+       Page :: | 1 | 2 | <3> |   

    IPB08CN10NG10 IPI08CN10NG

Infineon Technologies AG
Part No. IPB08CN10NG10 IPI08CN10NG
Description OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 406.74K  /  11 Page

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HUA FENG CIRCUIT





    INFINEON[Infineon Technologies AG]
Part No. IPB08CNE8NG IPI08CNE8NG IPP08CNE8N IPP08CNE8NG
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor

File Size 459.07K  /  11 Page

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    IPI08CN10NG IPB08CN10NG IPP08CN10N IPP08CN10NG

Infineon Technologies AG
Part No. IPI08CN10NG IPB08CN10NG IPP08CN10N IPP08CN10NG
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
OPTIMOS⑶2 POWER-TRANSISTOR

File Size 524.18K  /  11 Page

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    SPI08N50C3 SPP08N50C3 SPA08N50C3 SPP08N50C309

Infineon Technologies AG
Part No. SPI08N50C3 SPP08N50C3 SPA08N50C3 SPP08N50C309
Description New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

File Size 725.50K  /  14 Page

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Part No. K8D6316UBMTI0700 K8D6316UBMLC0800
Description 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
4M X 16 FLASH 2.7V PROM, 80 ns, PBGA48

File Size 645.14K  /  48 Page

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    IPP086N10N3G IPB083N10N3G IPI086N10N3G IPD082N10N3G

Infineon Technologies AG
Part No. IPP086N10N3G IPB083N10N3G IPI086N10N3G IPD082N10N3G
Description OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 474.12K  /  12 Page

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Part: K8D6316UBM-PI07
Maker: SAMSUNG
Pack: TSSOP
Stock: Reserved
Unit price for :
    50: $4.62
  100: $4.38
1000: $4.15

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