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56584 TFS172B KS11R2CQ BFT32A K11200DA HZ5B2 87843 B5A45VIC
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  id-1.6a Datasheet PDF File

For id-1.6a Found Datasheets File :: 3744    Search Time::2.672ms    
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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...S = -60V RDS(on) = 0.28 G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques...1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Jun...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...perature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings -60 20 -12 -48 -12 -12 12 25 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ545

HITACHI[Hitachi Semiconductor]
Part No. 2SJ545
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.81K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -20 10 -1.5 -6 1.3 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a cera...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

File Size 182.72K  /  4 Page

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    2SJ579

SANYO[Sanyo Semicon Device]
Part No. 2SJ579
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -60 20 -1.2 -4.8 1.5 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a ce...
Description Ultrahigh-Speed Switching Applications

File Size 41.45K  /  4 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...e Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 6 24 6 20 30 150 -55 ~ +150 Unit V A A A V W C C > Equiva...1,0 Typ. 1,5 10 0,2 10 0,40 0,33 6 600 100 30 10 40 90 30 1,01 80 Max. 2,5 500 1,0 100 0,65 0,...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK1187

SANKEN[Sanken electric]
Part No. 2SK1187
OCR Text ID ID (pulse) PD EAS Tch Tstg Ratings 100 20 12 48 (Tch 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (on) Ciss Coss ton toff 2.0 4.4 6.5 0.12 650 240 70 55 0...
Description MOSFET

File Size 33.28K  /  1 Page

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    FQT4N25

Fairchild Semiconductor, Corp.
Part No. FQT4N25
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...1) FQT4N25 250 0.83 0.66 3.3 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ ...
Description 250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 652.28K  /  8 Page

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