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IRF[International Rectifier]
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| Part No. |
IRHE8110 IRHE7110
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| OCR Text |
...Rectifier's RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Intern... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
314.98K /
12 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRH9250
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| OCR Text |
...s P-Channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si). Under identical pre- and postradiation test conditions, Internatio... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)
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| File Size |
101.45K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRH9230
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| OCR Text |
...s P-Channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, Internatio... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
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| File Size |
102.18K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFU2605 IRFR2605
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| OCR Text |
...D = 19A
S
Fourth Generation hexfets from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate ... |
| Description |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
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| File Size |
301.27K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
JANSH2N7262 IRHF7230 IRHF8230 JANSR2N7262
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| OCR Text |
...Rectifier's RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Intern... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
298.46K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
RHN7150
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| OCR Text |
...fier's MEGA RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, Internat... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
452.79K /
14 Page |
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it Online |
Download Datasheet |
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Price and Availability
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