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SGS Thomson Microelectronics
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| Part No. |
AN569
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| OCR Text |
...oncentration of the epitaxially-grown layer, which becomes the collector of each device. - Collector Epitaxial Layer Thickness: The thicknes...junction contact and the metallization in order to ensure uniform power sharing and ruggedness. Alth... |
| Description |
PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS
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| File Size |
117.41K /
8 Page |
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OptoDiode
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| Part No. |
OD-880W
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| OCR Text |
grown GaAlAs * 880nm peak emission for optimum matching with ODD-45W photodiode * Wide range of linear power output * Hermetically sealed TO...Junction Temperature
-55C TO 100C 400C/W Typical 135C/W Typical 100C
1Heat transfer minimized ... |
| Description |
HIGH-POWER GaAlAs IR EMITTERS
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| File Size |
370.29K /
2 Page |
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it Online |
Download Datasheet
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