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ghz-1.880 Datasheet PDF File

For ghz-1.880 Found Datasheets File :: 1328 Search Time::13.047ms
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				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10052
OCR Text	GHz GOLDMOSTM Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full go...
Description	35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
File Size	497.70K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10111
OCR Text	GHz GOLDMOSTM Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold m...
Description	6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor
File Size	336.82K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10133
OCR Text	... MHz DUT PTF 10133 0.040 l 894 GHz 0.096 l 894 GHz 0.098 l 894 GHz 0.073 l 894 GHz 0.107 l 894 GHz 0.110 l 894 GHz 0.250 l 894 GHz 0.081 l ...1 mF, 50 V Digi-Key P4525-ND Capacitor, 100 mF, 50 V Digi-Key P5182-ND Capacitor, 2.0 pF ATC 100 B C...
Description	85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
File Size	176.20K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	GHz GOLDMOSTM Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gol...
Description	12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA800T UPA800T-T1 UPA800T-KB
OCR Text	...n \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA * A Mini Mold Package Adopted * Built-in 2 Transistors (2 x 2SC4228) 2.00.2 2 3 0.7 PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm...
Description	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
File Size	47.29K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MRFIC1808
OCR Text	GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems (PCS) applications such as Digital Europ...1.7 to 2.1 GHz * 19 dB Typ Gain * 1.6 dB Typ Noise Figure * Simple Off-chip Matching for Maximum Gai...
Description	1.9 GHz GaAs LOW NOISE AMPLIFIER
File Size	156.48K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC4228 2SC4228-T1 2SC4228-T2 2SC4228NE68030
OCR Text	... High fT * Low Cre * High : 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz) 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) 1 \|S21e\|2 : * Super Mini Mold Package. (EIAJ: SC-70) 0.9...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	47.68K / 8 Page	View it Online	Download Datasheet

				Nais(Matsushita Electri... Panasonic, Corp. OSRAM GmbH NAIS[Nais(Matsushita Electric Works)] Matsushita Electric Works(Nais)
Part No.	ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A03 ARJ20A03X ARJ20A03Z ARJ20A12 ARJ20A12X ARJ20A12Z ARJ20A24 ARJ20A24X ARJ20A24Z ARJ20A4H ARJ20A4HX ARJ20A4HZ ARJ2203 ARJ2203X ARJ2203Z ARJ2212 ARJ2212X ARJ2212Z ARJ2224 ARJ2224X ARJ2224Z ARJ224H ARJ224HX ARJ224HZ ARJ22A03 ARJ22A03X ARJ22A03Z ARJ22A12 ARJ22A12X ARJ22A12Z ARJ22A24 ARJ22A24X ARJ22A24Z ARJ22A4H ARJ22A4HX
OCR Text	...C Gold alloy Max. 150m 1W (at 5 GHz, Impedance 50 , V.S.W.R. &1.25) 10mA 10V DC (resistive load) 1W (at 5 GHz, Impedance 50 , V.S.W.R. &1.25) 30 V DC 0.3 A DC Max. 1.25 Max. 0.5dB Min. 35dB Min. 30dB Characteristics Initial insulation r...
Description	SMD RELAYS WITH 8GHz CAPABILITIES SMD RELAYS WITH 8GHz CAPABILITIES 贴片继电器与8GHz的能
File Size	174.20K / 5 Page	View it Online	Download Datasheet

				MIMIX BROADBAND INC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers N.A. ETC[ETC] CELERITEK
Part No.	CMM1530-LC CMM1530-LC-00S0 CMM1530-LC-00ST CMM1530-LC-00T0 CMM1530-LC-00TT
OCR Text	...DMAone Handsets 1.85 to 1.91 GHz 3.0V, 30 dBm, PCS/PCN LCC-8 Power Amplifier Functional Block Diagram Ground Tab Vg2 1 Vg1 2 RF IN 3 Vd1 4 8 Vg3 7 RF OUT/Vd3 6 RF OUT/Vd3 5 Vd2 Ground Tab Description The CMM1530-LC is a linear powe...
Description	1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 1.85 to 1.91 GHz 3.0V, 30 dBm, PCS/PCN LCC-8 Power Amplifier 1.85.91 GHz.0V0 dBm的， PCN持有LCC - 8功率放大
File Size	448.95K / 4 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXG1028ATN CXG1045N CXG1006N CXG1017N
OCR Text	... -40 -5 0 1 2 3 Frequency (GHz) -50 -3- Isolation (dB) Isolation (dB) CXG1028ATN Schematic/Pinout Pin No. 1 CTLB GND Port1 GND CTLA 10pin TSSOP (PLASTIC) 10 Port3 GND GND GND Port2 FUNCTION CONTROL B GROUND RF POR...
Description	From old datasheet system GSM900/1800/1900 SPDT TX/RX Switch
File Size	80.68K / 7 Page	View it Online	Download Datasheet

For ghz-1.880 Found Datasheets File :: 1328 Search Time::13.047ms
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