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fet2-10 Datasheet PDF File

For fet2-10 Found Datasheets File :: 178 Search Time::1.062ms
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				NXP Semiconductors N.V.
Part No.	BUK9MGP-55PTS
OCR Text	...voltage Static characteristics, FET2 RDSon drain-source on-state resistance ratio of drain current to sense current - 21.3 25 m ...10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S...
Description	Dual TrenchPLUS logic level FET
File Size	344.95K / 20 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	TBB1002
OCR Text	...on are applicable for VHF unit (FET2) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown vo...10 10 15 0 k 0 12 k 0 15 0k 100 5 18 0 50 100 150 Ta (C) 200 ...
Description	Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	52.45K / 11 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1017 TBB1017SMTL-E
OCR Text	...V, RG = 100 k, f = 900 MHz * FET2 (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source br...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	232.38K / 14 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1012 TBB1012MMTL-E
OCR Text	...V, RG = 100 k, f = 900 MHz * FET2 (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source br...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	144.81K / 14 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1008
OCR Text	...on are applicable for VHF unit (FET2) (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source b...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	215.08K / 14 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1005 TBB1005EMTL-E
OCR Text	...on are applicable for VHF unit (FET2) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown vo...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	93.66K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1004 TBB1004DMTL-E TBB100406
OCR Text	...on are applicable for VHF unit (FET2) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown vo...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	93.84K / 10 Page	View it Online	Download Datasheet

				panasonic
Part No.	UP01878
OCR Text	... Gate (FET1) 2: Source 3: Gate (FET2) 0 to 0.02 Absolute Maximum Ratings Ta = 25C 4: Drain (FET2) 5: Drain (FET1) SMini5-G1 Packag...10 A, VGS = 0 VDS = 50 V, VGS = 0 VGS = 7 V, VDS = 0 ID = 1 A, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID ...
Description	From old datasheet system
File Size	71.13K / 3 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1002 TBB1002BMTL-E TBB100206
OCR Text	...on are applicable for VHF unit (FET2) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown vo...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	94.25K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4928
OCR Text	...A RDS(ON) < 16m RDS(ON) < 19.5m FET2 V DS(V) = 30V I D=7.3A (V GS = 10V) <24m (V GS = 10V) <29m (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Cr...10 6.8 13 3 31 nC nC nC ns ns ns ns ns nC 1885 16 25.6 19.5 1.85 Min 30 0.01 5 0.1 10 0.1 2.4 Typ Ma...
Description	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	152.59K / 8 Page	View it Online	Download Datasheet

For fet2-10 Found Datasheets File :: 178 Search Time::1.062ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |