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  es6 Datasheet PDF File

For es6 Found Datasheets File :: 65    Search Time::1.344ms    
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    TC7PH34FE

Toshiba Semiconductor
Part No. TC7PH34FE
OCR Text ...= 28 %VCC(min) SON6-P-0.50 (es6) Weight: 0.003g (typ.) Marking Pin Assignment (top view) Product name 1A 1 6 1Y HAF GND 2 5 VCC 2A 3 4 2Y Absolute Maximum Ratings (Ta = 25C) Characteri...
Description Dual NON-Inverter

File Size 176.00K  /  6 Page

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    SSM6J205FE

Toshiba Semiconductor
Part No. SSM6J205FE
OCR Text ...50 -55 to 150 Unit V V A mW C C es6 1, 2, 5, 6 : Drain 3 4 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this pro...
Description High-Speed Switching Applications

File Size 144.50K  /  5 Page

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    SSM6J206FE

Toshiba Semiconductor
Part No. SSM6J206FE
OCR Text ...50 -55 to 150 Unit V V A mW C C es6 1, 2, 5, 6 : Drain 3 4 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this pro...
Description 2000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power Management Switch Applications

File Size 198.30K  /  5 Page

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    SSM6J207FE

Toshiba Semiconductor
Part No. SSM6J207FE
OCR Text ...V A mW C C 1, 2, 5, 6 : Drain 3 es6 4 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in t...
Description High-Speed Switching Applications

File Size 176.80K  /  5 Page

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    SSM6J25FE

Toshiba Semiconductor
Part No. SSM6J25FE
OCR Text ...,2,5,6 :Drain 3 :Gate 4 :Source es6 JEDEC V Tch Tstg Note: Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in TOSHIBA 2-2N1A temperature, etc.) ma...
Description High Speed Switching Applications

File Size 154.52K  /  6 Page

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    SSM6J26FE

Toshiba Semiconductor
Part No. SSM6J26FE
OCR Text ...Unit V A mW C C 0.550.05 es6 JEDEC 1,2,5,6 :Drain 3 :Gate 4 :Source V Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in TOSHIBA 2-2N1A temperatu...
Description High Speed Switching Applications

File Size 153.78K  /  5 Page

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    SSM6J53FE

Toshiba Semiconductor
Part No. SSM6J53FE
OCR Text ...,2,5,6 :Drain 3 :Gate 4 :Source es6 JEDEC JEITA TOSHIBA 2-2N1A Weight: 7.0 mg (typ.) Min -20 -12 -0.3 (Note 2) (Note 2) (Note 2) (Note 2) 2.7 (Note 2) Typ. 5.4 95 122 137 568 75 67 29 39 10.6 7.4 3.3 0.8 Using conti...
Description High-Speed Switching Applications

File Size 185.28K  /  6 Page

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    SSM6K202FE

Toshiba Semiconductor
Part No. SSM6K202FE
OCR Text ...V A mW C C 1, 2, 5, 6 : Drain 3 es6 4 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in t...
Description High-Speed Switching Applications

File Size 178.69K  /  6 Page

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    SSM6K203FE

Toshiba Semiconductor
Part No. SSM6K203FE
OCR Text ...50 -55 to 150 Unit V V A mW C C es6 1, 2, 5, 6 : Drain 3 4 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this pro...
Description High-Speed Switching Applications

File Size 190.23K  /  7 Page

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    SSM6K204FE

Toshiba Semiconductor
Part No. SSM6K204FE
OCR Text ...V A mW C C 1, 2, 5, 6 : Drain 3 es6 4 : Gate : Source Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in t...
Description High-Speed Switching Applications

File Size 187.70K  /  6 Page

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For es6 Found Datasheets File :: 65    Search Time::1.344ms    
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