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  epitaxy Datasheet PDF File

For epitaxy Found Datasheets File :: 119    Search Time::0.984ms    
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    JAN-03 03-JAN

Vishay Siliconix
Part No. JAN-03 03-JAN
OCR Text ...r/soldering point) LOCEP (local epitaxy) A registrated trade mark of TEMIC for a process of epitaxial deposition on silicon. Applications occur in planer Z-diodes. It has an advantage compared to the normal process, with improved reverse cu...
Description Basic Definitions

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    LSC2210 LSC2210-FP LSC2210-ST

Agilent(Hewlett-Packard...
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. LSC2210 LSC2210-FP LSC2210-ST
OCR Text ...y the Metal Organic Vapor Phase epitaxy (MOVPE) process, resulting in long lifetimes and modest threshold currents. The LSC2210 package includes a photodiode for monitoring the laser output, a thermistor for monitoring laser heatsink temper...
Description 14 PIN DFB Laser Module with Cooler

File Size 125.22K  /  6 Page

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    CEL[California Eastern Labs]
Part No. GET-30704
OCR Text ...ayer grown by VPE(Vapour Phased epitaxy). (2) Oxide isolation to reduce parasitic capacitance. (3) A shallow and higher impurity doped base by ion implantation. A shallow emitter by diffusion from As-doped polysilicon. (4) An emitter of 0.5...
Description Qualification Test Results on Si MMIC

File Size 8,849.79K  /  20 Page

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    SKYWORKS[Skyworks Solutions Inc.]
Part No. GMV9822-000 GMV7811 GMV7811-000 GMV7821 GMV7821-000 GMV9801 GMV9801-000 GMV9821 GMV9821-000 GMV9822
OCR Text ...re grown by MBE (Molecular Beam epitaxy), which allows monolayer control of the doping profile.This translates to superb waferto-wafer uniformity. The series resistance is lower, and Q is higher when compared to an equivalent silicon hypera...
Description GaAs Hyperabrupt Junction Varactor Diodes

File Size 54.27K  /  3 Page

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    SIEMENS[Siemens Semiconductor Group]
Part No. KSY46
OCR Text ... 1) Metal Organic Vapour Phase epitaxy Semiconductor Group 1 1998-11-13 1.3 0.1 KSY 46 Maximum Ratings Parameter Operating temperature Storage temperature Supply current Thermal conductivity, soldered in air Characteristi...
Description Hall Sensor Preliminary Data

File Size 19.81K  /  3 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. LSC2110-622-ST LSC2110-622 LSC2110-622-BI LSC2110-622-DN LSC2110-622-FP LSC2110-622-SA LSC2110-622-SC LSC2110-622-SF
OCR Text ...y the Metal Organic Vapor Phase epitaxy (MOVPE) process, resulting in long lifetimes and modest threshold currents. LSC2110-622 package includes a photodiode for monitoring the laser output, a thermistor for monitoring the laser submodule t...
Description 2.5 mW 14 Pin DIL Cooled Laser Module

File Size 106.48K  /  6 Page

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    PS0.25-5

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. PS0.25-5
OCR Text epitaxy Low Dark current 0,25 mm active area Parameters: Active Area Dark Current at 20 V Total Capacitance at 20 V Spectral Responsivity at 800 nm Shunt Resistance at 10 mV Cut-off Frequency 1) (-3dB) Rise Time 1) at 20 V N.E.P. at 0 V a...
Description High Speed epitaxy Low Dark curren 0.25mm active area

File Size 171.53K  /  2 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62703-Q67 LD261 LD261-5 Q62703-Q395
OCR Text ...e, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81 Applications q Miniature photointerrupters q Punched tape readers q Industrial electronics q For control and drive circuits T...
Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器

File Size 34.92K  /  4 Page

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    SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
Part No. Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD267 LD268 LD269 Q62703-Q70 Q62703-Q71 Q62703-Q72 Q62703-Q73 Q62703-Q74 Q62703-Q75 Q62703-Q76 Q62703-Q77
OCR Text ...e, fabricated in a liquid phase epitaxy process q High reliability q Same package as BPX 80 series Applications q q q q Anwendungen q Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb q Lochstreifenleser q Industrieelektro...
Description GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列

File Size 42.60K  /  4 Page

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    ROHM[Rohm]
Rohm CO.,LTD.
Part No. RLD-78MAT1 RLD-78MA5
OCR Text ... manufactured by molecular beam epitaxy. The signal-to-noise ratio is stable in comparison to previous manufacturing techniques. This device is ideal for compact disc players in cars. FApplications Compact disc players in cars Navigation sy...
Description Laser Diodes > For Compact Disc Players(CD), CD-ROM, Optical Disc > For Compact Disc Players
AlGaAs laser diodes

File Size 64.32K  /  3 Page

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For epitaxy Found Datasheets File :: 119    Search Time::0.984ms    
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