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  ds-1s Datasheet PDF File

For ds-1s Found Datasheets File :: 5106    Search Time::1.782ms    
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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...Features * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM...1s ch - c(t) = s (t) * ch - c ch - c = 5.0C/W, Tc = 25C PDM PW T D= 0.03 PW T 0....
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ...Features * Low on-resistance R DS(on) = 0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 ...1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ...on in this area is limited by R DS(on) (T c= 25 *C ) 10 Ta = 25 C 0 50 100 Case Temperature 150 Tc (C) 200 ...1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ...Features * Low on-resistance R DS(on) = 0.12 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G ...1s t ho D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ...Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-2...1s h p ot uls e 100 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...Features * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-2...1s h p ot uls e 100 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...Features * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-2...1s h p ot uls e 100 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text ...Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220...1s ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM PW T D= 0.03 PW T 0...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ...Features * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220...1s t ho pu lse 100 1m 100 m 10 m Pulse Width PW (S) 1 10 Switching Time ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ...Features * Low on-resistance R DS(on) = 0.16 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220...1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switchi...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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For ds-1s Found Datasheets File :: 5106    Search Time::1.782ms    
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