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di-760 Datasheet PDF File

For di-760 Found Datasheets File :: 664 Search Time::1.312ms
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				Vishay Siliconix
Part No.	SI4465DY
OCR Text	...tr td(off) tf trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 4 V, RL = 4 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 4 V, VGS = - 4.5 V, ID = - 14 A 80 15 9 45 55 380 190 80 90 110 760 380 120 ns 120 nC Notes a. Pulse test; pulse width v ...
Description	P-Channel 1.8-V (G-S) MOSFET
File Size	58.14K / 4 Page	View it Online	Download Datasheet

				http:// NEC[NEC]
Part No.	UPA1760 PA1760
OCR Text	...VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100A/s 760 250 95 20 140 50 30 14 2.0 5.0 0.86 30 20 1.5 3.0 MIN. TYP. 20.5 27.0 31.0 2.1 7.5 10 10 MAX. 26.0 36.0 42.0 2.5 UNIT m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
File Size	66.84K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STN2NF06 6080
OCR Text	...6 -65 to 150 150 (1) ISD 8 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Unit V V V A A A W W/ o C V/ns o o C C (*) Pulse width li...760 100 30 Max. Un it S pF pF pF 2/9 STN2NF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHIN...
Description	From old datasheet system N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET
File Size	104.50K / 9 Page	View it Online	Download Datasheet

				TMT[Taiwan Memory Technology] TM Technology, Inc.
Part No.	T14M256A T14M256A-8J T14M256A-8P
OCR Text	...O HZ (1, 4) D OU T t DW t DH DI N WRITE CYCLE 2 ( OE = V IL Fixed) t WC Ad dres s t CW t WR CS t AW t WP WE ...760.05 1.270.05 0.460.05 0.710.05 8.560.05 0.250.03 0.660.05 6.810.08 7.620.05 1.350.03 3.560.10 0.1...
Description	32K X 8 HIGH SPEED CMOS STATIC RAM
File Size	72.60K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF540NL IRF540NS IRF540NSTRR IRF540NLPBF IRF540NSPBF
OCR Text	... = 25C, IF = 16A --- 505 760 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L =1.5mH RG = 2...
Description	100V Single N-Channel HEXFET Power MOSFET in a TO-262 package 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) Power MOSFET(Vdss=100V/ Rds(on)=44mohm/ Id=33A)
File Size	123.02K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR
OCR Text	... = 25C, IF = 6.2A --- 1.8 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ...760 50K 12V .2F .3F 740 D.U.T. VGS 3mA + V - DS 720 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ...
Description	600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 1.2ohm，身份证\u003d 6.2A
File Size	110.34K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBC40A IRFBC40
OCR Text	... = 25C, IF = 6.2A --- 1.8 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ...760 50K 12V .2F .3F 740 D.U.T. VGS 3mA + V - DS 720 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ...
Description	Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
File Size	93.87K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SK3358 2SK3358-S 2SK3358-Z D14322EJ1V0DS00
OCR Text	... VGS = 0 V IF = 55 A, VGS = 0 V di/dt = 100 A / s 3200 640 360 40 300 220 230 84 11 31 1.0 160 760 1.5 17 MIN. TYP. 20 28 2.0 35 10 10 MAX. 30 40 2.5 UNIT m m V S 5 5 5 5 Drain to Source On-state Resistance A A pF pF pF ns ns ns n...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system
File Size	46.09K / 4 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	2SK3377 2SK3377-Z D14328EJ1V0DS00
OCR Text	... VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/s 760 150 71 13 170 43 34 17 3.0 4.7 1.0 39 62 1.5 5 MIN. TYP. 35 54 2.0 10 10 10 MAX. 44 78 2.5 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY...
Description	Switching N-channel power MOS FET industrial use N沟道开关功率场效应晶体工业 DIODE SCHOTTKY SINGLE 30V 150mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-523 3K/REEL From old datasheet system
File Size	40.18K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIB5N65 IRFIB5N65A
OCR Text	... = 25C, IF = 5.2A --- 2.1 3.2 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ...760 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 740 50K 12V ...
Description	Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=5.1A)
File Size	99.33K / 8 Page	View it Online	Download Datasheet

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