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  cw-159 u Datasheet PDF File

For cw-159 u Found Datasheets File :: 56    Search Time::1.547ms    
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    MRF18060BLR3 MRF18060B MRF18060BLSR3

Freescale Semiconductor, Inc
Part No. MRF18060BLR3 MRF18060B MRF18060BLSR3
OCR Text ... Gain -- 13 dB (Typ) @ 60 Watts CW Efficiency -- 45% (Typ) @ 60 Watts CW * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Ou...159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x 0.787 Micr...
Description RF Power Field Effect Transistor

File Size 322.25K  /  12 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF5S21130HSR3 MRF5S21130HR3
OCR Text ...R, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Intern...159 x 1.024 Microstrip 0.117 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.000 Microstrip ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 379.13K  /  12 Page

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    MOTOROLA[Motorola, Inc]
Part No. MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S
OCR Text ...R, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance ...159 x 1.024 Microstrip 0.117 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.000 Microstrip ...
Description MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

File Size 395.61K  /  12 Page

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    3D3424D-4

Data Delay Devices, Inc.
Part No. 3D3424D-4
OCR Text ... ( so ) del a y ti m e s t lw t cw t cw t cs l t ds c t dh c t pc q t ld v t ld x previ o u s val ues fig u r e 2 : s e r i a l inte r f a c e tim i n g dia g r a m ne w bi t 1 doc #06020 data delay devices, inc. 2 6/25/2007 te...
Description MONOLITHIC QuAD 4-BIT PROGRAMMABLE DELAY LINE ACTIVE DELAY LINE, TRuE OuTPuT, PDSO14

File Size 164.54K  /  6 Page

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    MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ... Gain -- 13 dB (Typ) @ 60 Watts CW Efficiency -- 45% (Typ) @ 60 Watts CW * Internally Matched, Controlled Q, for Ease of use * High Gain, Hi...159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x 0.787 Micr...
Description HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors

File Size 486.59K  /  8 Page

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    Freescale (Motorola)
Part No. MRF18060ALSR3 MRF18060ASR3
OCR Text ...g 10:1 vswr, @ 26 vdc, 60 watts cw output power ? excellent thermal stability ? available with low gold plating thickness on leads. l suffix...159 x 0.055 microstrip z2 0.982 x 0.055 microstrip z3 0.087 x 0.055 microstrip z4 ...
Description 1.80–1.88 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFETs

File Size 247.08K  /  12 Page

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    PTF180601 PTF180601C PTF180601E

INFINEON[Infineon Technologies AG]
Part No. PTF180601 PTF180601C PTF180601E
OCR Text ...5 dB - Efficiency = 35% Typical CW performance - Output power at P-1dB = 75 W - Gain = 15.5 dB - Efficiency = 47% Integrated ESD protection:...159 0.91 180 1.03 -40 to +150 1.1 0.97 unit V V C W W/C W W/C C C/W C/W Data Sheet 2 20...
Description LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦,DCS / PCS的兆赫波8050年,1930-1990兆赫
LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz
LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz

File Size 229.29K  /  11 Page

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    Freescale (Motorola)
Part No. MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ...r gain ? 13 db (typ) @ 60 watts cw efficiency ? 45% (typ) @ 60 watts cw ? internally matched, controlled q, for ease of use ? high gain, hig...159 x 0.055 microstrip z2 0.982 x 0.055 microstrip z3 0.087 x 0.055 microstrip z4 ...
Description 1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET

File Size 220.83K  /  12 Page

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    XP1072-BD-EV1-P XP1072-BD XP1072-BD-000V

Mimix Broadband
Part No. XP1072-BD-EV1-P XP1072-BD XP1072-BD-000V
OCR Text ...r pulsed bias conditions, under CW Psat conditions further reduction in max supply voltage (~0.5V) is recommended. Electrical Characteris...159.36 151.62 140.75 125.76 111.87 82.39 22.31 22 31 -70.02 -117.10 -146.40 -176.56 -167.70 -81.07 -...
Description 34.0-37.0 GHz GaAs MMIC Power Amplifier

File Size 1,978.53K  /  8 Page

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    SMP100LC-120 SMP100LC-160 SMP100LC-230 SMP100LC-25 SMP100LC-65 SMP100LC-8 SMP100LC-90 SMP100LC-140 SMP100LC-200 SMP100LC

STMICROELECTRONICS[STMicroelectronics]
Part No. SMP100LC-120 SMP100LC-160 SMP100LC-230 SMP100LC-25 SMP100LC-65 SMP100LC-8 SMP100LC-90 SMP100LC-140 SMP100LC-200 SMP100LC-270 SMP100LC-35
OCR Text ...ommended pad layout). Zth(j-a)(CW) 100 IRM[Tj] / IRM[Tj=25C] 2000 1000 VRM > 50V 100 10 10 Tj(C) 1 25 50 75 100 125 VRM < 50V ...159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b E c A1 E E...
Description TELECOM EQuIPMENT PROTECTION: TRISIL

File Size 91.29K  /  9 Page

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