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For clamped Found Datasheets File :: 9063    Search Time::1.438ms    
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    TDA3566A TDA3566

Philips Semiconductors
Part No. TDA3566A TDA3566
OCR Text ...CTOR KILLER DETECTOR 2 clamped DETECTOR AMPLIFIER RED insertion 13 RED output 10 blanking (BL1) clamp pulse (L1) PAL/NTSC MODE SWITCH MGA819 7.16 MHz crystal (PAL/NTSC) For explanation of pulse mnemonics see Fig. ...
Description PAL/NTSC decoder

File Size 252.06K  /  24 Page

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    APT11GF120BRDQ1 APT11GF120BRDQ1G

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT11GF120BRDQ1 APT11GF120BRDQ1G
OCR Text ...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figur...
Description FAST IGBT & FRED
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC

File Size 427.50K  /  9 Page

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    NIF9N05CL NIF9N05CLT1 NIF9N05CLT3

ONSEMI[ON Semiconductor]
Part No. NIF9N05CL NIF9N05CLT1 NIF9N05CLT3
OCR Text clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com Benefits * High Energy Capability for Inductive Loads * Low Switching Noise Generation Features VDSS (clamped) 52 V RDS(ON) TYP 107 m ID MAX 2.6 A Drain (...
Description Protected Power MOSFET 2.6 A, 52V N-Ch Logic Level, clamped MOSFET w/ESD Protection

File Size 58.86K  /  6 Page

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    APT30GP60B

Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT30GP60B
OCR Text ...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on ...
Description    POWER MOS 7 IGBT
MOSFET

File Size 90.23K  /  6 Page

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    AD713JR-16 AD713JR-16-REEL AD713JR-16-REEL7 AD713SQ AD713SQ_883B AD713JCHIPS AD713TQ AD713TQ_883B

Analog Devices
Part No. AD713JR-16 AD713JR-16-REEL AD713JR-16-REEL7 AD713SQ AD713SQ_883B AD713JCHIPS AD713TQ AD713TQ_883B
OCR Text ...of A1, the AD713 under test, is clamped, amplified by op amp A2 and then clamped again. The error signal is thus clamped twice: once to prevent overloading amplifier A2 and then a second time to avoid overloading the oscilloscope preamp....
Description Quad Precision Low Cost High Speed BiFET Op Amp

File Size 641.48K  /  13 Page

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    Sipexoration
SIPEX[Sipex Corporation]
Part No. SPX2967T SPX2967 SPX2967U
OCR Text ...t, by ignition for example Hold clamped active to ground by controller while Inhibit is still high. Previous state remains, even ignition is shut off: self-holding state Ignition shut off while regulator is in self-holding state Regulator s...
Description 400mA Low Dropout Voltage Regulator

File Size 95.75K  /  12 Page

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    ON Semi
Part No. MGP20N63CL_D ON1867
OCR Text clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate-Emitter ESD protection, Gate Collector Over- Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. * Temperature Co...
Description 20 AMPERES N-CHANNEL IGBT V CE(on) = 1.7 V 630 VOLTS clamped
From old datasheet system

File Size 68.67K  /  4 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP20N40CL_D ON1864 MGP20N40CL
OCR Text ...on SMARTDISCRETESTM Internally clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate-Emitter ESD protection, Gate-Collector overvoltage protection from SMARTDISCRETESTM monolithic circuitry for us...
Description SMARTDISCRETES Internally clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE clamped N-CHANNEL IGBT V ce(on) = 1.8 VOLTS 400 VOLTS (clamped)

File Size 113.72K  /  5 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APT100GN60B2 APT100GN60B2G B2G
OCR Text ...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figur...
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: T-MAX&#153; [B2]; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 87;
IGBT

File Size 393.22K  /  6 Page

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